Prediction of polishing pressure distribution in CMP process with airbag type wafer carrier

Suzuki, Norikazu; Yasuda, Hozumi; Yamaki, Satoru; Mochizuki, Yoshihiro

doi:10.1016/j.cirp.2017.04.088

Cited by 24 publications

(6 citation statements)

References 9 publications

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“…As this deformation of the retainer ring contributes to further deformation of the polishing pad surface, the contact stress of the wafer around the trailing edge is disturbed. 7) Hence, the wafer did not contact the polishing pad at the edge, and the contact pressure at a small inner position from the edge increased locally. Additionally, the position where the characteristic variation existed was shifted approximately 15°clockwise from the trailing edge of the wafer.…”

Section: Measured Mrr Distributionmentioning

confidence: 99%

“…( 3). The contact pressure distribution was estimated using a method previously developed by the authors 7) . A schematic of the estimation of contact pressure distribution is shown in Fig.…”

Section: Visualized Preston's Coefficient Distributionmentioning

confidence: 99%

“…5,6) We estimated the distribution considering the contact between the wafer and retainer ring at the trailing edge and found that the contact caused a characteristic pressure variation near the edge. 7) Lee et al measured the MRR distribution with a worn polishing pad and found that the uneven wear of the pad caused variations in the MRR distribution via the contact pressure distribution. 8) In contrast, Preston's coefficient distribution has not been studied in the past.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Novel method to visualize Preston’s coefficient distribution for chemical mechanical polishing process

Furumoto

Sato

Suzuki

et al. 2022

Jpn. J. Appl. Phys.

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Preston’s law is widely used in polishing simulations in which the distribution of Preston’s coefficients on an entire wafer surface is generally assumed to be uniform. However, it is more likely that the distribution is not uniform and depends on several factors. To clarify Preston’s coefficient distribution in chemical mechanical polishing (CMP), we propose a novel experimental technique. In the proposed method, the unique experimental approach “stop polishing,” where the wafer does not rotate, and thus the circumferential variation of the coefficient is not averaged, is applied. Oxide-CMP experiments verified the uneven Preston’s coefficient distribution depending on the distance from the pad rotation center. Furthermore, we investigated the influence of slurry supply position on Preston’s coefficient distribution, and clarified that the distribution depends on slurry flow condition. Therefore, the proposed method is expected to be a novel tool for analyzing the CMP process from the perspective of Preston’s coefficient distribution.

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Section: Measured Mrr Distributionmentioning

confidence: 99%

Section: Visualized Preston's Coefficient Distributionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Novel method to visualize Preston’s coefficient distribution for chemical mechanical polishing process

Furumoto

Sato

Suzuki

et al. 2022

Jpn. J. Appl. Phys.

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show abstract

“…Therefore, when the WIWNU is high, the deviation in the flatness of the device in the wafer increases, but the amount of slurry used increases proportionally [89]. The most dominant factor that influences the WIWNU is the uniformity of pressurization of the membrane [90][91][92]. Therefore, improving the uniformity of polishing by developing a high-performance multi-zone membrane structure is a key research direction for reducing the amount of slurry and improving the device yield.…”

Section: Challenges For Cmp Slurry and Slurry Injection Systemmentioning

confidence: 99%

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Lee

Kim

Jeong

2021

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment. In this study, the previously reported impacts of CMP on the environment and studies conducted on developing various methods to reduce environmental burden are reviewed. In addition to analyzing the impacts of CMP, this paper introduces a method for treating CMP wastewater and improving the material removal efficiency through the improvement of CMP consumables. Finally, the authors review research on hybridization of the CMP process and discuss the direction in which CMP technology will progress to improve sustainability in the future.

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“…In these conditions, it is difficult to predict the workpiece surface topography with unknown cutting edges. Some authors relied on empirical [6,15,16] or analytical approaches [17][18][19][20] where a great number of assumptions were made, which led to their limited transferability for predicting surface roughness on other experimental set-ups. These approaches usually employed some statistical models to obtain the abrasives distribution and their interaction depth with the workpiece surface [18,19], and assumed average dimensions and regular shapes (e.g.…”

Section: Introductionmentioning

confidence: 99%

A curious observation of phenomena occurring during lapping/polishing processes

Yang

Liao

et al. 2019

Proc. R. Soc. A.

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We demonstrate that the kinematics of the polishing process is more intriguing than an idealized planetary movement as all the previous studies reported. In reality, the workpiece is pseudo-constrained by the planetary carrier and because of this its relative motion to the polishing pad also incurs a ‘parasitic’ movement that previously has not been observed. Here, we report and model this parasitic movement and quantify its effect upon the workpiece surface roughness. Using a motion capture system, the principal and ‘parasitic’ movements between the sample and polishing tool have been tracked and our models validated. It is proved that considering this parasitic movement the prediction of workpiece surface morphology can be significantly improved when compared with the idealized approach (i.e. planetary). Our observations and modelling framework open the avenue to carefully consider the compliance between the tools and workpiece in other manufacturing processes for accurate predictions of the process outcomes.

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Prediction of polishing pressure distribution in CMP process with airbag type wafer carrier

Cited by 24 publications

References 9 publications

Novel method to visualize Preston’s coefficient distribution for chemical mechanical polishing process

Novel method to visualize Preston’s coefficient distribution for chemical mechanical polishing process

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

A curious observation of phenomena occurring during lapping/polishing processes

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