Prediction of proton-induced degradation of GaAs space solar cells

1MeV electron irradiation influence on GaAs solar cell performance

“…Our results [20] Our results [11,17,18] (6)), as a function of the isochronous annealing temperature. Open circles-the short-circuit current, filled circles-the dark current.…”

“…As one can see, our estimates differ from the estimates published in Refs. [11,17,18] by more than one order of magnitude.…”

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

“…It was observed that the space solar figures of merit (the short circuit current , the open circuit voltage , the maximum output power , the fill factor and the conversion efficiency ) decrease linearly with the logarithm of the fluence. The degradation was analytically modeled [10][11][12][13][14] in order to predict the effect of the long term exposure of the solar cells [15,16]. For example, is related to the irradiation fluence by a simple formula of the form [17]:…”

Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

“…where σ is defect capture cross-section with a value of 4 × 10 −13 cm 2 , v th is thermal velocity of the carriers with [6], and N is the concentration of defects, N = kφ and k = βE niel , in which φ is fluence, k is the introduction rate (the number of defects induced by the incident particle), β is a constant coefficient and its value is 3:76 × 10 3 g/MeV/cm 3 [11,26], and E niel (nonionizing energy loss) for 150 keV proton is 0.259 MeV·cm 2 /g [27], so k of 150 keV proton is 974 cm -1 . In fact, irradiation will produce a series of defects with different defect energy levels in the forbidden band, in which deep defect energy levels can function as significant recombination centers.…”