2013
DOI: 10.1002/jnm.1967
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Prediction of the density of interfacial state produced by radiation in NMOS

Abstract: This paper is aimed at the description of the mathematical relationships between energy position in the band gap and the density of interfacial state in N-type metal-oxide-semiconductor (NMOS) capacitor irradiated by 60 Co. Substantial differences of density of interfacial state caused by physical environment are observed. On the basis of non-linear curve fitting, a typical numerical method is used to quantitatively analyze the energy-dependent density of interfacial state. The simulations agree very well with… Show more

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