Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering

Abstract

A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.