“…The ability to obtain device-scale characteristics, such as the power conversion efficiency or the J-V curve, comes at the price of abstracting out much of molecular interaction behavior that occurs on lengthscales <1 nm. Instead, the disordered energetic landscape resulting from these sub-lattice interactions is estimated using alternative methods [125,126]. Commonly, a Gaussian Disorder Model is used, which applies a perturbation to a site's energy, selected randomly from a Gaussian distribution with a typical standard deviation of σ = 100 meV [127,128], inspired by explicit QCCs of charge carrier densities within the material [129,130].…”