2014
DOI: 10.1002/chem.201403014
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Preferential Formation of SiOC over SiC Linkage upon Thermal Grafting on Hydrogen‐Terminated Silicon (111)

Abstract: In a stringent and near oxygen-free environment, Si-H surfaces were introduced to a trifluoroalkyne, an alcohol-derivatized alkyne, as well as an equal mixture of both alkynes at a temperature of 130 °C. Contact angle measurements, high-resolution X-ray photoelectron spectroscopy (XPS), and angle-resolved XPS were performed to examine the system. Si-H surfaces were found to have a strong preference towards the formation of Si-O-C rather than Si-C bonds when the alcohol and alkyne reactivities were compared.

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Cited by 42 publications
(42 citation statements)
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“…As shown in Figure 2, the Si2p assignment for Si2p 3/2 and Si2p 1/2 at the nominal position of 99-100 eV was found to exhibit relatively different FWHM values with the p-type silicon, showing broader dual peaks (FWHM = 2.3 nm) (Figure 2a) compared to the n-type silicon (FWHM = 0.9 nm) (Figure 2b). On the other hand, both spectra showed the emergence of the peak at 102.2-102.5 eV, representative of the Si-O-C linkage to the surface [17,21,22]. The differences of peak profile and the changes in the FWHM of the Si2p could be attributed to the distribution of chemically shifted Si2p lines arising from surface roughening as reported previously in literature [23,24].…”
Section: Resultssupporting
confidence: 80%
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“…As shown in Figure 2, the Si2p assignment for Si2p 3/2 and Si2p 1/2 at the nominal position of 99-100 eV was found to exhibit relatively different FWHM values with the p-type silicon, showing broader dual peaks (FWHM = 2.3 nm) (Figure 2a) compared to the n-type silicon (FWHM = 0.9 nm) (Figure 2b). On the other hand, both spectra showed the emergence of the peak at 102.2-102.5 eV, representative of the Si-O-C linkage to the surface [17,21,22]. The differences of peak profile and the changes in the FWHM of the Si2p could be attributed to the distribution of chemically shifted Si2p lines arising from surface roughening as reported previously in literature [23,24].…”
Section: Resultssupporting
confidence: 80%
“…Hence, we suspect that we could disregard all Hall effects at this temperature. Between both the n-and p-type substrate, the initial mechanism for the formation of Si-O-C bonds on the Si-H surface was relatively similar, occurring via the abstraction of hydrogen in the nucleophilic route [17,18] with the liberation of hydrogen during the process. However, from the start, the XPS Si2p spectrum on both the n-type silicon (111) and p-type silicon (111) showed the formation of Si-O-C bonding but their overall profiles were starkly different.…”
Section: Resultsmentioning
confidence: 99%
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“…[1][2] The reactivity of hydrogen-terminated Si(111) (H-Si(111)) surfaces toward organic nucleophiles, including alkenes, [3][4] alkynes, [5][6] amines, [7][8][9][10][11] thiols and disulfides, [12][13] Grignards, [14][15] and alcohols, [16][17][18][19][20][21][22][23][24][25] has been widely exploited to impart desirable functionality to the Si interface. These surface reactions have been used to control the interface between Si and metals, [26][27][28][29][30][31] metal oxides, [32][33][34][35] polymers, [36][37][38][39][40][41] and redox assemblies.…”
Section: Introductionmentioning
confidence: 99%