Preferential growth mechanism of REBa2Cu3Oy (RE = Y, Nd) crystal on MgO substrate by liquid phase epitaxy

Nomura, Katsumi; Hoshi, Saburo; Yao, Xin; Kakimoto, K.; Nakamura, Yūichi; Izumi, Teruo; Shiohara, Yuh

doi:10.1557/jmr.2001.0138

Cited by 36 publications

(23 citation statements)

References 23 publications

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“…1. We used YBCO thick films (thickness: 10-30 m) prepared on MgO substrates [14], which have excellent crystallinity and superconducting properties and are thus expected to be almost ideal superconducting ground-planes. A 400-nm-thick SrTiO (STO)/(LaAlO ) -(SrAl Ta O ) (LSAT)/STO insulating multilayer was deposited on the LPE-YBCO thick film by rf magnetron sputtering.…”

Section: Methodsmentioning

confidence: 99%

Ramp-edge junctions with interface-modified barriers fabricated on YBCO thick films

Wakana

Adachi

Sugiyama

et al. 2003

IEEE Trans. Appl. Supercond.

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We fabricated ramp-edge junctions with an interface-modified barrier on YBa 2 Cu 3 O (YBCO) liquid phase epitaxy (LPE) thick films. The LPE thick films were used as ground-planes. For the insulating layer between the ground plane and base electrode, a SrTiO 3 (STO)/(LaAlO 3 ) 0 3 -(SrAl 0 5 Ta 0 5 O 3 ) 0 7 (LSAT)/STO multilayer with the dielectric constant of approximately 32 was employed. We fabricated ramp-edge junctions with La-doped YBa 2 Cu 3 O (La-YBCO) and La-doped YbBa 2 Cu 3 O (La-YbBCO) as base and counter electrodes, respectively. The fabricated junctions exhibited resistively and capacitively shunted junction (RCSJ)-like characteristics and typical c n products of 2.6 and 1.1 mV at 4.2 and 40 K, respectively. The 1 -spread in c as small as 8.1% was obtained for 100-junction series-arrays. The use of ground plane reduced the sheet inductance of electrodes to a value of 0.76-0.94 pH/square at 4.2 K.

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Section: Methodsmentioning

confidence: 99%

Ramp-edge junctions with interface-modified barriers fabricated on YBCO thick films

Wakana

Adachi

Sugiyama

et al. 2003

IEEE Trans. Appl. Supercond.

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“…In the last two decades, materials including thin films with metal and non-metals oxides have been actively studied (Li et al 2014;Ohnishi et al 2004;Zawadzka et al 2014a;Nomura et al 2001). One of the main goals of these studies was finding the films with specific properties which allow using them as buffer layers.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of MgO thin films grown by laser ablation technique

et al. 2016

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We have investigated the structural, linear and nonlinear optical properties of high-quality MgO thin films deposited by laser ablation technique on quartz substrates. The deposition process was carried out at various temperatures of the substrates from room temperature to 600°C in order to investigate these properties of the films and their mutual influence. The structural and morphological properties of the films were investigated by X-ray diffraction. The quality of the films was improved with an increase of the substrate temperature. The linear optical properties of the films were studied by classic and timeresolved photoluminescence spectra in the broad range of the temperature form 13 to 300 K. An innovative time-resolved photoluminescence technique let us precisely measure the decay time in the real time. Results of these measurements reveal a simple exponential decay behavior typical for well oriented crystalline thin films. Presented spectra confirm high structural and linear optical quality of investigated films. The nonlinear optical properties of the films were investigated by third harmonic generation technique. Our results indicated that the substrate temperature slightly affected nonlinear optical properties and the values of third order nonlinear susceptibilities at the 600°C were found to be smaller relative to RT. All these unusual properties of MgO thin films deposited by laser ablation technique made this material very interesting for the subsequent oriented growth of the other oxide a but also for potential other optical applications.

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“…The vertical dipping method [9] was employed to study the grain changes during the initial growth stage. An Sm 2 O 3 crucible was used to minimize the contamination from the crucible.…”

Section: Methodsmentioning

confidence: 99%

“…In this LPE process, a single-crystalline MgO substrate is commonly used for the growth of REBCO thick films mainly due to its chemical stability with respect to the Ba-Cu-O (BCO) melts [3][4][5][6][7][8][9][10]. Because the epitaxial process directly occurs on the MgO substrate via a heterogeneous bonding REBCO/MgO, the initial stage of LPE growth of REBCO has several distinctive features, such as lattice misfit caused defects, predominant dissolution or growth and MgO melting-back phenomenon.…”

Section: Introductionmentioning

confidence: 99%

Preferential growth mechanism of REBa₂Cu₃O_y (RE = Y, Nd) crystal on MgO substrate by liquid phase epitaxy

Cited by 36 publications

References 23 publications

Ramp-edge junctions with interface-modified barriers fabricated on YBCO thick films

Ramp-edge junctions with interface-modified barriers fabricated on YBCO thick films

Optical properties of MgO thin films grown by laser ablation technique

A comparative study on liquid phase epitaxy initial stage of REBCO on MgO substrate

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