Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

George, John P.; Beeckman, Jeroen; Woestenborghs, Wouter; Smet, Philippe; Bogaerts, Wim; Neyts, Kristiaan

doi:10.1186/1556-276x-8-62

Cited by 34 publications

(19 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The c‐axis orientation could, however, be maintained by applying slower ramp rates (below < 5 °C min –1 ). The as‐deposited films show a dielectric constant of 660, which is very consistent with other research on BaTiO 3 thin films . No visible hysteresis on the C‐V‐curves was observed, possibly due to the very low coercive field and thickness of the film.…”

Section: The Current Toolboxsupporting

confidence: 89%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

View full text Add to dashboard Cite

properties in thin film complex oxides and their heterostructures is still in its infancy.Functional perovskite oxide thin films have traditionally been deposited by physical, high temperature techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). While these methods can provide films of very high structural quality, they do not offer deposition of conformal film on complex structures while maintaining control of stoichiometry. Chemical deposition techniques were long thought unsuitable for deposition of complex systems with high structural quality. This has changed dramatically over the last two decades. One of the most important techniques to emerge in this area has been atomic layer deposition (ALD).In this short review we aim to summarize the perovskite and ABO 3 -oxides, down to the ilmenite structure, that have been deposited using the ALD technique. The review includes work done over the last 20 years, and covers all oxide perovskites with ferromagnetic, piezoelectric and ferroelectric functionality known to have been deposited by ALD ( Table 1). The origin of the properties in these specific structures is briefly discussed, followed by a complete listing of the known systems. Perovskite heterostructures with new properties and combinations of properties are brought up, before thoughts on possible future work in the field concludes the paper. Why Atomic Layer Deposition?The ALD technique was pioneered independently in both Russia and Finland during the 1960s and 70s, and its history was thoroughly described by Puurunen in 2014. [4] The technique has been comprehensively discussed in several review papers over the last years. The first commercial application was to deposit zinc sulfide, used for electroluminescent display panels. The number of materials with known deposition routes was very limited for the first 20 years, before it exploded in the 1990s and still continues to grow. At the time of the review written by Miikkulainen et al. in 2013, binary oxides of most of the natural elements had been reported, as well as many nitrides, sulfides and fluorides (Figure 2). [5] As the community has embraced the possibility of growing epitaxial films of high chemical and structural quality, systems that are even more complex have been deposited, including materials with ternary, quaternary and even quinary compositions.The advantages and drawbacks of ALD as a thin film deposition technique have been reviewed several times the The last 20 years have seen a massive increase in reports on complex oxides with functional properties synthesized by atomic layer deposition (ALD). Many of these compounds have perovskite or perovskite-related structures, and exhibit a range of electric and magnetic properties. This short review summarizes the current status of functional perovskites and ABO 3 compounds down to the ilmenite structure prepared by ALD, focusing on ferromagnetism and ferro-and piezoelectricity. All perovskite-related compounds known to have been deposited by ALD down to the ilmeni...

show abstract

Section: The Current Toolboxsupporting

confidence: 89%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…These phases could be attributed to the incorporation of a small amount of BGT with the substrate which due the diffusion of silicon into BGT films arise very fast at high-temperature heating process and formed interfacial silicate [19]. However, the formation of Fresnoite peak can be avoided by growing a thicker layer of buffer layer [20].…”

Section: Resultsmentioning

confidence: 99%

Sol-Gel Synthesis and Characterization of Ba1-xGdxTiO3+δ Thin Films on SiO2/Si Substrates Using Spin-Coating Technique

Teh

Saif²,

Poopalan³

2017

View full text Add to dashboard Cite

Ba1-xGdxTiO3+δ, at x = 0, 0.05, 0.1, 0.15, 0.2, (BGT) thin films have been fabricated on SiO2/Si substrate using sol-gel method. The microstructure and surface morphology of the fabricated films have been investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD results show that the fabricated films are crystalline with perovskite structure. There is a shifting of the preferred peak at 31.5° to a higher angle as the doping ratio increases suggesting a distortion lattice exists in the films, which could be due to the substitution of Gd 3+ ions into Ba-site. The decreasing of lattice constants confirms the substitution of Gd 3+ in BaTiO3 lattice structure. The microstrain and dislocation density are found to be increased with the increase of Gd 3+ doping, which attributed to the reduction of lattice volume that due to the ionic size mismatch effect. The AFM results show decreasing trend in both average grain size and roughness parameters. Therefore, the microstructure and surface morphology of BGT samples is strongly dependent on the Gd 3+ doping concentration that mainly due to the difference ionic radius substitution.

show abstract

“…However, in each case the Pockels coefficient of the resulting film was strongly degraded. An alternative approach was proposed in [16], relying on the use of a thin spin-coated lanthanide buffer layer on which the BTO layer is deposited using a sol-gel method. The transparent buffer layer can induce a preferential orientation in the BTO-layer.…”

Section: Integration With Ferro-electric Materialsmentioning

confidence: 99%

Heterogeneous Integration on Silicon Photonics

et al. 2018

View full text Add to dashboard Cite

To enhance the functionality of the standard silicon photonics platform and to overcome its limitations, in particular for light emission, ultrafast modulation and non-linear applications, integration with novel materials is being investigated by several groups. In this paper we will discuss, amongst others, the integration of silicon waveguides with ferroelectric materials such as PZT and BTO, with electro-optically active polymers, with 2Dmaterials such as graphene and with III-V semiconductors through epitaxy. We discuss both the technology and design aspects.

show abstract

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Cited by 34 publications

References 21 publications

Functional Perovskites by Atomic Layer Deposition – An Overview

Functional Perovskites by Atomic Layer Deposition – An Overview

Sol-Gel Synthesis and Characterization of Ba1-xGdxTiO3+δ Thin Films on SiO2/Si Substrates Using Spin-Coating Technique

Heterogeneous Integration on Silicon Photonics

Contact Info

Product

Resources

About