Preliminary study of 65 nm node alternating phase-shift mask fabrication

Hosono, Kouji; Ishiwata, Naoyuki; Asai, Satoru; Maruyama, Hiroshi; Miyahara, Yutaka; Sanki, Syuichi; Yamashita, Youhei; Hotta, Yuichiro; Furukawa, Tomohiko; Naitou, Minoru; Miyashita, Hiroyuki; Noguchi, Shigeru

doi:10.1117/12.467487

Cited by 3 publications

(5 citation statements)

References 2 publications

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“…For AAPSM a rather large remaining resist width, c, is required to allow resist edge shifting and prevent etch leakage into the adjacent feature. Total required remaining resist has been reported to 96 nm for a positive CAR 14 . The standard resist for the Sigma7300 is FEP-171, a positive CAR that is also a commonly used for 50 keV VSB.…”

Section: Discussionmentioning

confidence: 98%

“…The max CD error, b, in the first level can be expected to 22 nm, or better 14 . It consists of errors from the VSB patterning and process.…”

Section: Discussionmentioning

confidence: 98%

“…One drawback of second level i-line patterning is the large corner rounding that reduces the available alignment margin 14 . This is addressed in the Sigma7300 DUV architecture by a shorter wavelength, higher NA, partially coherent imaging, negative black, and corner enhancement.…”

Section: Discussionmentioning

confidence: 99%

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Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

et al. 2005

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Phase shifting mask (PSM) development activity is increasing as 193nm optical lithography is extended beyond the 90nm technology node. The requirements on second level mask patterning of advanced PSM have for many applications exceeded the capability of i-line pattern generators, and it is natural for deep-ultraviolet (DUV) pattern generators to be employed for this task. The Sigma7300 DUV mask writer has the attributes required for advanced PSM applications: high resolution, tight CD uniformity and pattern placement, an accurate alignment system, and grid matching to first level exposures. The paper reports system performance for the parameters that constitute the error budget for second level patterning and shows that the mask writer is suitable for second level patterning of advanced PSMs. The alignment system employs the same laser and optics that are used for system calibration and exposure, including a CCD camera that links system calibration to alignment. As a result overlay performance is stable, and is shown to be independent of alignment mark image contrast changes due to different mask materials or resist thicknesses. The mask process uses a conventional chemically amplified resist, and does not require the use of charge dissipating top layers. Combined with throughput that is essentially independent of pattern complexity, DUV pattern generation provides a high yield solution for second level patterning of advanced PSMs for the 65nm and 45nm nodes.

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Section: Discussionmentioning

confidence: 98%

“…The max CD error, b, in the first level can be expected to 22 nm, or better 14 . It consists of errors from the VSB patterning and process.…”

Section: Discussionmentioning

confidence: 98%

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Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

et al. 2005

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“…5OkeV Toshiba VSB tool can be resolved below lOOnm as shown in figure9, which could be solved resolution issues on condition that function of alignment could be operated [5].…”

Section: Current Status and Issues Of 2nd Processmentioning

confidence: 99%

Study of Cr patch validity for ArF CPL mask and its fabrication

et al. 2004

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“…However, at the 65 nm node more aggressive PSM solutions are required that exceed the capability of i-line tools. For example, alternating PSM (Alt-PSM) masks are being used for 65 nm gate level patterning [3][4][5][6] . For this application, 2 nd level patterning is difficult with i-line laser tools.…”

Section: Introductionmentioning

confidence: 99%

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

et al. 2005

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Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2 nd level alternating PSM patterning at the 65 nm and 45 nm nodes.

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Preliminary study of 65 nm node alternating phase-shift mask fabrication

Cited by 3 publications

References 2 publications

Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

Study of Cr patch validity for ArF CPL mask and its fabrication

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

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