Preparation and broadband white emission of Eu-doped thin films based on SiAlON

Camps, I.; Mariscal, Antonio Joaquín Franco; Serna, Rosalía

doi:10.1016/j.jlumin.2016.10.040

Cited by 11 publications

(12 citation statements)

References 29 publications

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“…The as‐grown and thermally treated SiAlON films were found to be amorphous as determined by X‐ray diffraction analysis (see Material S2, Supporting Information). The amorphous nature of the films was further confirmed by Raman measurements that showed no crystalline modes in the spectrum, and by transmission electron microscopy cross‐section analysis in a recent publication . Note that the amorphous structure is the usual structure of oxide films deposited by PLD as we have demonstrated in our previous works .…”

Section: Methodssupporting

confidence: 70%

“…The films designed in this way have the Eu doping distributed in a multilayer nanostructure, and a nominal thickness of 202.5 nm. The actual thickness of the films was determined independently by spectroscopic ellipsometry after the film deposition, using a Cauchy model to fit the ellipsometric parameters and to determine its refractive index . The determined film thickness is 200 ± 5 nm, in a good agreement with the designed value.…”

Section: Methodsmentioning

confidence: 59%

“…Note that the amorphous structure is the usual structure of oxide films deposited by PLD as we have demonstrated in our previous works . Furthermore, the procedure to produce the nanostructure doping of the films and the actual doping structure has been evidenced by different techniques, including transmission electron microscopy analysis (TEM) in our previous works in which we have investigated the doping with other rare‐earths ions and nanoparticles …”

Section: Methodsmentioning

confidence: 90%

“…The determined film thickness is 200 ± 5 nm, in a good agreement with the designed value. Finally, the films were annealed at 700 °C during 1 h in air because it has been observed that such treatment in PLD deposited films leads to the reduction defects and to an increase of the rare‐earth ions emission . The as‐grown and thermally treated SiAlON films were found to be amorphous as determined by X‐ray diffraction analysis (see Material S2, Supporting Information).…”

Section: Methodsmentioning

confidence: 99%

“…Previously we have studied the photoluminescence of amorphous SiAlON‐Eu doped thin films, finding that they show a very wide band emission covering the whole visible (VIS) wavelength range . It is interesting that while the electrical excitation of bulk and nanostructured oxides doped with trivalent Eu (Eu 3+ ) has been extensively studied in the past, however, the cathodoluminescence of divalent Eu (Eu 2+ ) has attracted attention only recently .…”

Section: Introductionmentioning

confidence: 99%

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White Cathodoluminescence Emission from Eu‐Doped SiAlON Thin Films

Camps

Mariscal

Calvo‐Barrio

et al. 2018

Physica Status Solidi (a)

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SiAlON materials in thin film configuration are very attractive because their composition can be easily modified from that of silicon dioxide to that of silicon nitride to effectively tune their electrical and optical response, therefore making them suitable for a wide range of optoelectronic devices. In addition, rare‐earth doped SiAlON phosphors in powder configuration are excellent down‐converters to visible light when excited by ultraviolet‐blue photons from light emitting diodes. In this work, the direct excitation by electrons of amorphous nanostructured Eu‐doped SiAlON thin films is explored. XPS analysis shows that the Eu in the films is in its divalent oxidation state (Eu2+), with traces of Eu with a richer oxygen coordination at the film surface. The cathodoluminescence emission from the films is dominated by a wide emission band (FWHM 195 nm) in the visible associated with the Eu2+ 5d to 4f electronic transitions, with a small narrow peak contribution from Eu3+ intra‐4f electronic transitions. Assessment of the CIE color coordinates shows that the spectral emission is close to the pure white. These results show the excellent potential of the Eu‐doped SiAlON films for its implementation in CMOS structures as white light solid state emitters in field emission lamps and displays.

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Section: Methodssupporting

confidence: 70%

Section: Methodsmentioning

confidence: 59%

Section: Methodsmentioning

confidence: 90%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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