Preparation and characterisation of PZT films by RF-magnetron sputtering

Frunza, Raluca; Ricinschi, Dan; Gheorghiu, Felicia; Apetrei, R.; Luca, D.; Mitoşeriu, Liliana; Okuyama, Masanori

doi:10.1016/j.jallcom.2011.03.021

Cited by 22 publications

(8 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…16 However, replacing them with ferroelectric thin film oxides such as PZT, along with the compact silicon photonic platform, could be an alternative to realize smaller, functional and power efficient devices. 10,17−19 A variety of methods has been used to develop ferroelectric thin films: chemical solution deposition (CSD), 20 RF magnetron sputtering, 21 metal organic chemical vapor deposition (MOCVD) 22 and pulsed laser deposition (PLD). 23 However, the direct deposition of PZT on silicon still remains a challenge.…”

Section: ■ Introductionmentioning

confidence: 99%

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

George

Smet

Botterman

et al. 2015

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

ABSTRACT:The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5−15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln 2 O 2 CO 3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm 2 , and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

show abstract

Section: ■ Introductionmentioning

confidence: 99%

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

George

Smet

Botterman

et al. 2015

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…[19][20][21][22][23] There are also some studies on polycrystalline, ceramic-like, thin films obtained by various techniques (e.g., sol-gel, sputtering, etc.). [24][25][26][27][28] Recent advances in deposition techniques (e.g., pulsed laser deposition (PLD) allow nowadays to obtain high quality epitaxial ferroelectric films. 29,30 Although such films are now regularly obtained by many groups, their dielectric properties were only scarcely studied by comparison with bulk ceramics or polycrystalline thin films.…”

Section: Introductionmentioning

confidence: 99%

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

Pintilie

Hrib

Pasuk

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Voltage and frequency dependent capacitance measurements were performed on epitaxial BaTiO3 and Pb(Zr0.2Ti0.8)O3 thin films deposited on single crystal SrTiO3 substrates with (001) and (111) orientations. The measured capacitors have common bottom SrRuO3 contact and different metals as top electrodes: SrRuO3, Pt, Cu, Al, and Au. The capacitance-voltage characteristics were used to extract information regarding the density of the free carriers and the linear contribution to the static dielectric constant. The frequency dependent impedance was used to develop a suitable equivalent circuit for the epitaxial ferroelectric capacitors. It was found that the frequency dependence of the imaginary part of the impedance can be well simulated, in all cases, using a circuit composed of Schottky-type capacitance related to electrode interfaces, contact resistance, and the R-C parallel connection related to the ferroelectric volume of the film. Values for the components of the equivalent circuit were obtained by fitting the experimental data with the simulated curves. These were then used to extract quantities such as dielectric constant in the ferroelectric volume, the width of the depletion layers, and the apparent built-in potential. It was found that, although the investigated capacitors are of different ferroelectric materials, grown on substrates with different orientations, and having different metals as top electrodes, the values for the capacitance associated with the Schottky contacts and the apparent built-in potential are not very different. The results suggest a strong influence of ferroelectric polarization on the electrode interface properties in the case of epitaxial ferroelectric films.

show abstract

“…These physical properties of PbðZr 1 À x Ti x ÞO 3 thin films are well known to be largely dependent on the Zr=Ti ratio. Many of these properties are maximized near the morphotropic phase boundary (MPB) with a Ti composition of 0.48 [3][4][5][6]. Moreover, orientation engineering is a suitable approach to improve the physical properties of the PbðZr 1 À x Ti x ÞO 3 thin films [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

The effect of misfit strain on the phase diagram and pyroelectric effect in (110) oriented Pb(Zr1−xTix)
Qiu
¹
,
Chen
²
,
Wang
³

et al. 2016
Solid State Communications
11
0
1
0
View full text Add to dashboard Cite

Preparation and characterisation of PZT films by RF-magnetron sputtering

Cited by 22 publications

References 38 publications

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

The effect of misfit strain on the phase diagram and pyroelectric effect in (110) oriented Pb(Zr1−xTix)
Qiu
¹
,
Chen
²
,
Wang
³

et al. 2016
Solid State Communications
11
0
1
0
View full text Add to dashboard Cite

Contact Info

Product

Resources

About

Preparation and characterisation of PZT films by RF-magnetron sputtering

Cited by 22 publications

References 38 publications

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

The effect of misfit strain on the phase diagram and pyroelectric effect in (110) oriented Pb(Zr1−xTix)Qiu1, Chen2, Wang3 et al. 2016Solid State Communications11010View full textAdd to dashboardCite

Contact Info

Product

Resources

About

The effect of misfit strain on the phase diagram and pyroelectric effect in (110) oriented Pb(Zr1−xTix)
Qiu
¹
,
Chen
²
,
Wang
³

et al. 2016
Solid State Communications
11
0
1
0
View full text Add to dashboard Cite