“…In general, inorganic n-type or p-type oxide materials grown at low temperature inside physical vapour deposition process tools offer the advantages of reducing device fabrication cost and enhancing device stability through resistance to moisture. Among inorganic carrier transport materials, few metal oxide materials have demonstrated the capabilities of fulfiling operational device requirements, this includes titanium oxide (TiO x ) [1,2,3], tin oxide (SnO x ) [9,10,11,12,13], molybdenum oxide (MoO x ) [6] and nickel oxide (NiO) [7,8]. Indeed, high carrier mobility and a pristine electrical interface with the absorbing layer are critical requirements to minimise carrier recombination of the device.…”