Preparation and characteristics study of ZnO: (Al, Cu, I) thin films by chemical spray pyrolysis

Abstract

Spray pyrolysis deposition technique has been used to grow ZnO thin films doped with different dopant species (Al, Cu, I). The optical and electrical properties of films were investigated as function of dopant type and concentration. The structural characteristics of undoped and doped ZnO films were studied using X-ray diffraction (XRD). The electrical resistivity as low as 4 × 10 −2 Ωcm was obtained for ZnO:Al with 5 at.% dopant concentration. ZnO:Cu films prepared at specific conditions exhibited p-type conductivity. The optical band gap of doped ZnO films varied from 3.09 eV to 3.2 eV. XRD investigation confirmed that the doped ZnO films had preferred orientation in the direction of (101) plane.

Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetector

“…The photodetector responsivity as a function of wavelength before and after RTA is depicted in figure 7. The shape of spectral responsivity was very close to the transmittance spectrum of the Al:ZnO film deposited on the glass especially in the UV-VIS region [19]. It shows that a detection process takes place in the UV and visible regions.…”

“…Optical and electrical properties of ZnO:Al films were reported recently [19]. The Hall measurement revealed that the conductivity of the ZnO:Al films is n-type.…”