Preparation and characteristics study of CdS/macroporous silicon/c-Si double heterojunction photodetector by spray pyrolysis technique

Ismail, Raid A.; Al‐Samarai, Abdul-Majeed E.; Ali, Alaa Y.

doi:10.1016/j.ijleo.2018.04.101

Cited by 21 publications

(9 citation statements)

References 36 publications

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“…Therefore, constructing energy band-matched heterojunctions is an effective method to improve photodetector performance with promising applications. [27,28] In this work, a UV-visible CdS (PVP)/PbI 2 heterojunction photodetector was successfully obtained. Through hightemperature annealing of CdS film, surface modification of PVP doping, and constructing heterojunctions with PbI 2 , the shortcomings of CdS film prepared by sol-gel, such as low switch ratio, slow response speed, and single function were solved.…”

Section: Introductionmentioning

confidence: 99%

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High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector

Yang,

Huang,

Wang

et al. 2024

Physica Rapid Research Ltrs

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In this work, the PVP‐assisted CdS/PbI2 heterojunction UV‐Visible Photodetector was constructed by the sol‐gel spin coating method. The X‐ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) demonstrated the synthesis and successful complexation of PVP, CdS, and PbI2. The UV‐Visible absorption spectroscopy and UV photoelectron spectroscopy (UPS) measurements of CdS and PbI2 were carried out to prove that the CdS and PbI2 form a type II heterojunction. Compared with pure CdS film photodetector, the CdS (PVP)/PbI2 heterojunction photodetector has self‐powered characteristics, and exhibits excellent photoconductivity in the UV‐Visible with higher switching ratios, detection rates, and faster response times of 1.1 × 105, 9.77 × 1011 Jones and 20 ms, respectively, which has great potential in the field of UV‐Visible self‐powered photodetector.This article is protected by copyright. All rights reserved.

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Section: Introductionmentioning

confidence: 99%

“…Therefore, constructing energy band‐matched heterojunctions is an effective method to improve photodetector performance with promising applications. [ 27,28 ]…”

Section: Introductionmentioning

confidence: 99%

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector

Yang,

Huang,

Wang

et al. 2024

Physica Rapid Research Ltrs

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“…There are many deposition techniques to synthesize the CdS thin film such as Solgel deposition [18,19], Dip coating [20], electrodeposition [21,22], Spray pyrolysis [23,24], chemical bath deposition (CBD) [25][26][27], chemical vapour deposition (PVD) [28,29], hydrothermal [30,31], etc. These techniques could produce high quality CdS thin films exhibiting several properties and for a specific application, these should be optimized.…”

Section: Introductionmentioning

confidence: 99%

Times effect on morphological, structural and optical behaviors of cds thin films for photoelectrochemical cells application

Hamza¹,

Lamiri²,

Tounsi³

et al. 2023

J. Fundam and Appl Sci.

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Cadmium Sulphide thin films have been successfully electrodeposited on a conducting Indium-Tin-Oxide (ITO) glass substrate, with different deposition time (10 min, 20 min, and 30 min). The Scanning electron microscopy (SEM), UV-Vis spectrophotometry, X-ray diffraction (XRD), and Atomic force microscopy (AFM) were used to characterize the morphological of films obtained. Moreover, Mott–Schottky (MS) measurements and Photoelectrochemical (PEC) measurements were carried out to study their structural, optical and electrical properties respectively. XRD result points to high crystallinity oriented along (002) planes. The studies reveal that the optical transmission increases with decreasing time of deposition. Mott-Schottky and Photoelectrochemical studies indicates that the CdS thin films display n-type semiconductor, which allows used as layer in photovoltaic cell applications.

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“…So, the interface engineering, energy band engineering and doping technology are studied to modulate and improve the performance of CdS/Si heterojunction. [19,22,23] As is well known, the carriers in the transportation can be trapped outside the depletion region to deteriorate the performance of devices due to the thicker layers of p-/n-type materials. [2] Therefore, it will also be a way to improve the performance of CdS/Si heterojunction through reducing the thickness of p-/n-type materials and shortening the transportation distance from the depletion region to the electrode, and thus reducing the trapped probability of carriers.…”

Section: Introductionmentioning

confidence: 99%

CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties*

Li¹,

Ji²,

Song³

et al. 2021

Chinese Phys. B

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Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction. The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and CdS nanofilms on the ITO glass in turn. The relation of current density to applied voltage (I–V) shows the obvious rectification effect. From the analysis of the double logarithm I–V curve it follows that below ∼ 2.73 V the electron behaviors obey the Ohmic mechanism and above ∼ 2.73 V the electron behaviors conform to the space charge limited current (SCLC) mechanism. In the SCLC region part of the traps between the Fermi level and conduction band are occupied, and with the increase of voltage most of the traps are occupied. It is believed that CdS/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.

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Preparation and characteristics study of CdS/macroporous silicon/c-Si double heterojunction photodetector by spray pyrolysis technique

Cited by 21 publications

References 36 publications

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector

Times effect on morphological, structural and optical behaviors of cds thin films for photoelectrochemical cells application

CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties*

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Preparation and characteristics study of CdS/macroporous silicon/c-Si double heterojunction photodetector by spray pyrolysis technique

Cited by 21 publications

References 36 publications

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI2 Heterojunction Photodetector

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI2 Heterojunction Photodetector

Times effect on morphological, structural and optical behaviors of cds thin films for photoelectrochemical cells application

CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties*

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High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector

High‐Performance of Self‐Powered UV–Visible CdS (PVP)/PbI₂ Heterojunction Photodetector