Preparation and characterization of Bi2S3 thin films using modified chemical bath deposition method

Ahire, R. R.; Sankapal, Babasaheb R.; Lokhande, C.D.

doi:10.1016/s0025-5408(01)00509-8

Cited by 53 publications

(22 citation statements)

References 7 publications

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“…The decrease in film thickness beyond the final thickness in Fig. 2 is due to film dissolution, similar to that reported by others [24]. The XRD pattern as shown in Fig.…”

Section: Discussionsupporting

confidence: 89%

Room temperature PbS nanoparticle growth, incubation in porous TiO2 electrode for photosensitization application

Patil

Lokhande

Mane

et al. 2007

Journal of Non-Crystalline Solids

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“…The decrease in film thickness beyond the final thickness in Fig. 2 is due to film dissolution, similar to that reported by others [24]. The XRD pattern as shown in Fig.…”

Section: Discussionsupporting

confidence: 89%

Room temperature PbS nanoparticle growth, incubation in porous TiO2 electrode for photosensitization application

Patil

Lokhande

Mane

et al. 2007

Journal of Non-Crystalline Solids

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“…The observed XRD peak positions in the unirradiated Bi 2 S 3 film indicate that it crystallizes in the orthorhombic structure (Ahire et al, 2001). In case of film irradiated at a dose of 20 kGy, initially the peaks are sharper.…”

Section: Resultsmentioning

confidence: 88%

Electron beam induced modifications of bismuth sulphide (Bi2S3) thin films: Structural and optical properties

Selvasekarapandian¹,

Balaji²,

Lekha³

et al. 2010

Radiation Physics and Chemistry

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“…Толщины t пленок CuI определяли гравиметриче-ски [32] в предположении, что плотность пленок со-ответствовала плотности массивного материала иодида меди 5.67 г/см 3 . С целью анализа кристаллической структуры на-ноструктурированных массивов ZnO и пленок CuI исследовали рентгеновские спектры образцов (XRD), которые регистрировали с помощью дифрактометра • к их поверхно-сти через теневую маску.…”

Section: методика экспериментаunclassified

Гетероструктура Для Обращенного Диода На Основе Электроосажденного В Импульсном Режиме Наномассива Оксида Цинка И Изготовленной Методом SILAR Пленки Иодида Меди

Клочко¹,

Kopach²,

Хрипунов³

et al. 2018

Физика И Техника Полупроводников

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A heterostructure promising for designing a backward diode is formed from a zinc-oxide nanorod array and a nanostructured copper-iodide film. The effect of modes of successive ionic layer adsorption and reaction (SILAR) deposition and the subsequent iodization of CuI films on smooth glass, mica, and fluorine-doped tin oxide (FTO) substrates and on the surface of electrodeposited nanostructured zinc-oxide arrays on the film structure and electrical and optical properties is investigated. A connection between the observed variations in the structure and properties of this material and intrinsic and iodination-induced point defects is established. It is found that the cause and condition for creating a backward-diode heterostructure based on a zinc-oxide nanoarray formed by pulsed electrodeposition and a copper-iodide film grown by the SILAR method is the formation of a p ^+-CuI degenerate semiconductor by the excessive iodination of layers of this nanostructured material through its developed surface. The n -ZnO/ p ^+-CuI barrier heterostructure, which is fabricated for the first time, has the I – V characteristic of a backward diode, the curvature factor of which (γ = 12 V^–1) confirms its high Q factor.

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Preparation and characterization of Bi2S3 thin films using modified chemical bath deposition method

Cited by 53 publications

References 7 publications

Room temperature PbS nanoparticle growth, incubation in porous TiO2 electrode for photosensitization application

Room temperature PbS nanoparticle growth, incubation in porous TiO2 electrode for photosensitization application

Electron beam induced modifications of bismuth sulphide (Bi2S3) thin films: Structural and optical properties

Гетероструктура Для Обращенного Диода На Основе Электроосажденного В Импульсном Режиме Наномассива Оксида Цинка И Изготовленной Методом SILAR Пленки Иодида Меди

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