In this chapter, two important aspects of using CeO 2 in the field of gas sensors are presented. Firstly, for CO 2 detection in the range of 0-5000 ppm, a binary semiconductor oxides CeO 2 -Y 2 O 3 was used. Secondly, as a dopants, in oxide semiconductor systems, used to detect the NO 2 . In this case, CeO 2 is used as a dopant in hybride composite, consisting of reduced graphene oxide/ZnO, in order to increase the sensibility in NO 2 detection at low concentration in the range of 0-10 ppm. The structural and morphological characterization of sensitive materials by X-ray diffraction, SEM, adsorption desorption isotherms, thermal analysis and RAMAN spectroscopy are presented. Also, the sensing element of the sensor that detects the NO 2 is achieved by depositing the nanocomposite material on the interdigital grid. The electronic conditioning signal from the sensing element is achieved by using a Wheatstone bridge together with an instrumentation operational amplifier.