Preparation and Characterization of Cu2CrSnS4 Thin Films Deposited at Different Temperatures

Abstract

In this study, Cu2CrSnS4 thin films are prepared using chemical pyrolysis technique at various deposition temperatures (200, 250, 300, 350, 400 and 450 °C) and without any annealing process. The structure characteristics of the films have been studied by X ray diffraction (XRD), micro-Raman spectroscopy, and Field Emission Scanning Electron Microscope (FESEM), while the optical characteristics are investigated by UV-Visible spectrophotometry, and the electrical properties aree described by Hall Effect test. Results of XRD for Cu2CrSnS4 (CCTS) films showed the tetragonal crystal structure of stannite phase with (112) preferred orientation. The results of Raman spectroscopy of the prepared CCTS thin films showed a clear peak at ~ 336 cm-1. Furthermore, the morphology results and through (FESEM) images of thin films surface showed different forms and shapes with different granular size ranging from 40 to 294 nm. Optical examination of the ultraviolet-visible spectrum showed an optical energy gap of (1.69-1.59 eV) which are considered to be suitable for thin films solar cells applications. The electrical measurements through Hall Effect test showed that the films have charge carriers of (p-type). From results analysis, the optimized temperature of the prepared (CCTS) samples was 350 oC.