Preparation and characterization of DC sputtered molybdenum thin films

Abstract

Molybdenum (Mo) thin films have been deposited on soda-lime glass substrates using a DC magnetron sputtering system. Their electrical resistivity, and their morphological, structural and adhesive properties have been examined with respect to the deposition power, deposition time and substrate temperature. The electrical resistivity of the Mo films could be reduced by increasing any of the above parameters. Within the range of the investigated deposition parameters, the films showed a mono-crystalline nature with a preferred orientation along the (1 1 0) plane. The Mo films adhesion to the soda-lime glass could be improved by increasing the substrate temperature. At a deposition power of 200 W, deposition time of 20 min and substrate temperature of 450°C, Mo thin film exhibiting mono-crystalline structure with thickness equal to 450 nm and electrical resistivity equal to 1.85 · 10 À4 X cm was obtained.ª 2011 Faculty of Engineering, Alexandria University. Production and hosting by Elsevier B.V.All rights reserved.

Negative substrate bias induced modifications of the physical properties of DC sputter deposited nano-crystalline Mo thin films

“…The resistivity of our films is much lesser than the values reported (~ 40-80 -cm) for the Mo films with comparable or larger crystallite sizes [8,27,30]. The effect of oxygen contamination during the film growth upon its electrical properties is well documented [12,19,20].…”

The Effect of Sputtering Parameters on the Film Properties of Molybdenum Back Contact for CIGS Solar Cells

“…However, an increase in dc power causes the Ar ions to bombard the target with higher energy; so greater numbers of Mo particles arrive at the substrate and become deposited layer, which causes the rapid growth of a relatively thick film. An increase in the film thickness results in a decrease in the resistivity of the Mo films [15].…”

Properties of MoO3 films by thermal oxidation: Annealing induced phase transition

“…The films annealed at 573 K the electrical resistivity increased to 2 × 10 −4 cm and further increase of annealing temperature to 673 K, it was increased to 3 2 × 10 −3 cm. In the literature, Kashyout et al 24 reported the electrical resistivity of 1 8 × 10 −4 cm in metallic molybdenum films formed by DC magnetron sputtering. Bhosle et al 38 reported that the electrical resistivity of -MoO 3 films was ∼10 −3 cm.…”

“…Martinez et al 15 reported that the formed at substrate temperature of 673 K exhibits the single phase of -MoO 3 was conformed by X-ray diffraction and Raman studies, and also studied the gas sensing properties. Thin films of molybdenum oxide were formed by different deposition technique like chemical vapour deposition, 16 sol-gel method, 14 Article metal-organic deposition (PMOD), 17 electron beam evaporation, 18 19 Thermal evaporation 20 pulsed laser deposition, 21 and DC [22][23][24][25] and RF sputtering. 4 26-28 Among these techniques, DC magnetron sputtering is widely used to produce the films on large area substrates.…”