Preparation and characterization of fluorinated indium tin oxide films prepared by r.f. sputtering

Geoffroy, C.; Campet, G.; Portier, J.; Salardenne, J.; Couturier, G.; Bourrel, M.; Chabagno, J.M.; Ferry, D.; Quet, C.

doi:10.1016/0040-6090(91)90543-7

Cited by 11 publications

(7 citation statements)

References 4 publications

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“…Consequently, the calculated conductivity does not change so much with the variation of oxygen partial pressure. It is noteworthy that a divergence between the measured electrical properties and the estimate from optical measurements has been already pointed out by other authors [28,29], and it has been considered as an indicator for the limitations of the free electron approximation.…”

Section: Resultsmentioning

confidence: 98%

Infrared Reflectance and Electrical Conductivity of ?-Ga2O3

Vı́llora

Morioka

Atou

et al. 2002

phys. stat. sol. (a)

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Section: Resultsmentioning

confidence: 98%

Infrared Reflectance and Electrical Conductivity of ?-Ga2O3

Vı́llora

Morioka

Atou

et al. 2002

phys. stat. sol. (a)

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“…The successful use of Sn[OCH(CF 3 ) 2 ] 4 (HNMe 2 ) 2 to prepare films prompted us to examine fluoroalkoxide complexes of other main group elements that can also form transparent conducting fluorine-doped oxides. In this report, we describe the synthesis of indium(III) fluoroalkoxide complexes, including several that are potential precursors to fluorine-doped indium oxide, an alternative to indium−tin oxide. − There appear to be no previously reported examples of indium(III) fluoroalkoxide complexes, but Roesky and co-workers have synthesized and structurally characterized the interesting indium(I) aryloxide dimer [In(μ-O-2,4,6-(CF 3 ) 3 C 6 H 2 )] 2 . In addition, Mehrotra and co-workers have reported the synthesis of the nonfluorinated indium tris(alkoxide) compounds In(OR) 3 where R = Me, Et, i -Pr, n -Bu, s -Bu, t -Bu, and pentyl…”

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confidence: 99%

Indium Fluoroalkoxide Compounds

1999

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Reactions of indium amide complexes with fluorinated alcohols give indium fluoroalkoxide complexes. In[N-t-Bu(SiMe(3))](3) reacts with 3 equiv of (CF(3))Me(2)COH to give the homoleptic alkoxide dimer [In{&mgr;-OCMe(2)(CF(3))}{OCMe(2)(CF(3))}(2)](2), but reactions involving the more acidic alcohols (CF(3))(2)MeCOH and (CF(3))(2)CHOH yield products containing t-BuNH(2), which is derived from the amide ligands. Thus, In[N-t-Bu(SiMe(3))](3) reacts with (CF(3))(2)MeCOH to give In[OCMe(CF(3))(2)](3)(H(2)N-t-Bu) and with (CF(3))(2)CHOH to yield In[OCH(CF(3))(2)](3)(H(2)N-t-Bu)(3) and [H(3)N-t-Bu][In{OCH(CF(3))(2)}(4)(H(2)N-t-Bu)]. Reactions of (CF(3))(2)MeCOH and (CF(3))(2)CHOH with In(tmp)(3) (tmp = the anion derived from 2,2,6,6-tetramethylpiperidine) and In(NEt(2))(3) are less complicated. In(tmp)(3) reacts with 3 equiv of (CF(3))(2)CHOH to give In[OCH(CF(3))(2)](3)(Htmp) and with 4 equiv of (CF(3))(2)CHOH or (CF(3))(2)MeCOH to yield the salt compounds [H(2)tmp][In{OCR(CF(3))(2)}(4)] (R = H, Me). Trigonal bipyramidal [H(2)NEt(2)][In{OCH(CF(3))(2)}(4)(HNEt(2))] and octahedral mer-In[OCMe(CF(3))(2)](3)(py)(3) are isolated from reactions involving In(NEt(2))(3). Crystal structure determinations of [In{&mgr;-OCMe(2)(CF(3))}{OCMe(2)(CF(3))}(2)](2), [H(3)N-t-Bu][In{OCH(CF(3))(2)}(4)(H(2)N-t-Bu)].EtOEt, In[OCH(CF(3))(2)](3)(Htmp), [H(2)tmp][In{OCMe(CF(3))(2)}(4)], In[OCMe(CF(3))(2)](3)(py)(3), and [H(2)NEt(2)][In{OCH(CF(3))(2)}(4)(HNEt(2))] were carried out.

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“…Recently, improvement of the electrical conductivity of the ITO films has been required, and doping of several cations and/or anions has been attempted. Among them, fluorine is a potential dopant to increase the conductivity by forming oxygen deficiency in the ITO films 8–10 . Fluorine can be introduced as a gaseous dopant such as CF 4 during film deposition 8,9 .…”

Section: Introductionmentioning

confidence: 99%

“…Geoffroy et al 10 . reported the preparation of fluorinated ITO films using In 2 O 3 –SnF 2 sputtering targets.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Fluorine‐Containing Indium Tin Oxide Sputtering Targets using Spark Plasma Sintering Process

Takeuchi

Kageyama

Nakazawa³

et al. 2008

Journal of the American Ceramic Society

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z Japan Synchrotron Radiation Research Institute (SPring-8) Kouto, Hyogo 679-5198, JapanFluorine-containing indium tin oxide (F-ITO) sputtering targets were prepared using spark-plasma-sintering (SPS) process. The initial powder, which was prepared by reacting ITO with HF, was sintered to the 10 cm-disks with nearly 90% of the theoretical density by the SPS process. The resulting disks were consisted of ITO and InOF, and the fluorine content was about 4 at.%. Using the F-ITO disks as sputtering target, thin films were deposited on the glass substrates. The electrical conductivity and optical transmission of the deposited films were comparable to those of the conventional ITO films, while the surface roughness of the films was much improved. P. Gouma-contributing editor

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Preparation and characterization of fluorinated indium tin oxide films prepared by r.f. sputtering

Cited by 11 publications

References 4 publications

Infrared Reflectance and Electrical Conductivity of ?-Ga2O3

Infrared Reflectance and Electrical Conductivity of ?-Ga2O3

Indium Fluoroalkoxide Compounds

Preparation of Fluorine‐Containing Indium Tin Oxide Sputtering Targets using Spark Plasma Sintering Process

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