Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology

Wu, G.M.; Yen, Chih-Ta; Tsai, Bor-Chen; Chien, H.W.

doi:10.1016/j.surfcoat.2011.04.024

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…The expression is plane wave expansion method, as well as the concept of calculus to position the energy gap's principle to build energy-band structure [5]. The order of the photonic crystal array has the most direct impact on the Brillouin zone, either triangle or cubic in the array (Fig.…”

Section: Methodsmentioning

confidence: 99%

Investigation of Nanoscale Photonic Crystal Arrays on Gallium Nitride Blue Light-emitting Diodes

Liu¹,

Wu²

2018

dtcse

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Abstract. Nanoscale photonic crystal arrays have been investigated by simulation to enhance the light extraction efficiency of blue gallium nitride light-emitting diodes. The plane wave expansion method and finite difference time domain method were used to reveal the photonic energy band gaps with the relevant structure parameters. The results showed suitable band gaps at the wavelength range of 454~606 nm for triangular lattice array with lattice constant of 200 nm. It would facilitate the design process for high-efficient diodes.

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Section: Methodsmentioning

confidence: 99%

Investigation of Nanoscale Photonic Crystal Arrays on Gallium Nitride Blue Light-emitting Diodes

Liu¹,

Wu²

2018

dtcse

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“…When the periodicity is chosen correctly, the modified in-plane wave vector falls within the escape corn, resulting in extraction to air at an angle dependent on the specific lattice constant within this range. Several methods exist to define the periodic PC structures on indium-tin-oxide (ITO) or p-GaN, including electron beam lithography [ 6 – 9 ], laser holographic lithography [ 10 ], focused ion beam technology [ 11 ], nanoimprint lithography [ 12 ], and self-assembled colloidal polystyrene nanosphere (PS NS) coating [ 13 , 14 ]. The self-assembled PS NS coating method has advantages such as a large area arrangement with a gradually changing fill factor, simple process, sophisticated equipment, and etching damage.…”

Section: Introductionmentioning

confidence: 99%

Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip-Drop Method with Post-deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs

Lei

Yang

et al. 2018

Nanoscale Res Lett

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In this study, we synthesized a periodic polystyrene nanosphere (PS NS) array using the dip-drop method with post-deposition etching to improve the light extraction efficiency (LEE) of InGaN/GaN light-emitting diodes (LEDs). The dip-drop method has advantages such as simple procedure, inexpensive equipment, room temperature deposition, and easy implementation in LEDs. The arrangement of PS NSs on an indium-tin-oxide (ITO)-coated glass substrate depends on the average dip-drop speed and the concentration of the PS NS suspension. The periodic PS NS array can modulate the in-plane wave vector of emission light from a semiconductor to free space and thus increase the escape probability. The calculated and experimental results indicated that the light output intensity of the InGaN/GaN LEDs can be improved by using the periodic PS NS array as a window layer; this array comprises PS NSs with a diameter of 100 nm separated with periods of 100 and 100 nm in the x and y directions. Because of the improved LEE, the InGaN/GaN LEDs with the optimal PS NS array window layers exhibited a 38% increase in light output intensity compared with the conventional InGaN/GaN LEDs under 20-mA driving current.

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Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Arnatkevičiūtė

Reklaitis

Kadys

et al. 2014

Journal of Elec Materi

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Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology

Cited by 4 publications

References 13 publications

Investigation of Nanoscale Photonic Crystal Arrays on Gallium Nitride Blue Light-emitting Diodes

Investigation of Nanoscale Photonic Crystal Arrays on Gallium Nitride Blue Light-emitting Diodes

Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip-Drop Method with Post-deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs

Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

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