Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

ZnGaNO Photocatalyst Particles Prepared from Methane-Based Nitridation Using Zn/Ga/CO3 LDH as Precursor

“…On the basis of the above analysis, in the present work, Zn/Ga/CO 3 LDHs with [Zn]:[Ga] = 2:1 were nitridated under an oxidative environment to prepare ZnGaNO photocatalyst particles. Methane (CH 4 ) was introduced during the nitridation to provide carbon, which can work as a reducing agent to enhance the conversion rate of Ga 2 O 3 to GaN . The flow rates of methane were varied to adjust the redox environment of the nitridation process while the other nitridation parameters were kept the same.…”

Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

“…For applications in thin film display devices, the study of a low cost, large area deposition method is needed for the preparation of GaN film doped with RE ions. For depositing large area films at low cost, radio-frequency magnetron sputtering appears promising [8][9][10][11][12]. GaN on silicon (Si) substrate will pave the way for the integration of devices with mature Si IC technology.…”

Structural and optical properties of zinc nitride films prepared by rf magnetron sputtering

“…Various nitride semiconductors, such as Cu 3 N, GaN, AlN, and InN [1][2][3][4], have been prepared for a variety of applications. However, compared with reports on group-III-nitride semiconductors, those on group-II-nitride semiconductors are relatively limited.…”