2004
DOI: 10.1016/j.tsf.2003.12.066
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Preparation and characterization of high-quality stoichiometric LiNbO3 thick films prepared by the sol–gel method

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Cited by 27 publications
(16 citation statements)
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“…Currently, LiNbO 3 thin films can be obtained by following technological methods compatible with modern integrated technologies of micro-and nanoelectronics: epitaxy [24], chemical vapor deposition [25], Radio Frequencysputtering [26], pulsed laser deposition [27][28][29][30], and the sol-gel process [31].…”
Section: Introductionmentioning
confidence: 99%
“…Currently, LiNbO 3 thin films can be obtained by following technological methods compatible with modern integrated technologies of micro-and nanoelectronics: epitaxy [24], chemical vapor deposition [25], Radio Frequencysputtering [26], pulsed laser deposition [27][28][29][30], and the sol-gel process [31].…”
Section: Introductionmentioning
confidence: 99%
“…LN has a broad homogeneity range with compositions from congruent (cLN, 48.35–48.6 mol% Li 2 O [9]) to stoichiometric (sLN, ~50 mol% Li 2 O [9]). At temperatures above 300 °C the congruent material degrades [10] and is, therefore, inappropriate for high temperature applications. In contrast, our preliminary tests of the stoichiometric crystals indicated that the material is stable up to at least 900 °C [11].…”
Section: Introductionmentioning
confidence: 99%
“…The focus has been on lattice-matched Al 2 O 3 (0001) and LiTaO 3 (0001) substrate on which hetero-epitaxial lithium niobate growth has been reported [3][4][5][6][7]. Deposition of lithium niobate on silicon with silicon oxide layer also has been of interest mainly because of possibilities of integration with silicon on insulator (SOI) technology.…”
Section: Introductionmentioning
confidence: 99%