Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

Keshavarzi, Reza; Mirkhani, Valiollah; Tangestaninejad, Shahram; Mohammadpoor‐Baltork, Iraj; Fallah, Hossein; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza

doi:10.1016/j.materresbull.2010.09.019

Cited by 10 publications

(5 citation statements)

References 21 publications

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“…The IZO samples show a resistivity distribution on the order of 10 −1 to 10 −2 Ω cm. The Zn mole fraction (≈40%) averaged over the entire IZO film thickness was larger than the mole fraction of fully densified IZO thin films (≈20%) in previous reports, [ 64,65 ] where the mole fraction of Zn was optimized to achieve the lowest resistivity down to the order of 10 −4 Ω cm. Furthermore, we prepared IZO thin films of similar thickness via ALD and then annealed the ALD samples under the same annealing conditions as the SIS samples.…”

Section: Resultsmentioning

confidence: 63%

Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis

Kim

Jeon

2022

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The decoration of the TCO electrode surface with chemical species serving as a charge transfer mediator, electrochemical tag, or electrocatalyst is a widely employed strategy to realize desirable electrochemical properties in electrodes. [11][12][13] Recent progress in the fabrication of porous TCO electrodes has rendered the surface modification scheme more successful by maximizing the loading of the functional redox species onto the porous electrodes with a high surface area. [14,15] Given that the mass transport of the electrolyte species to the electrode is not restricted, surfacemodified porous electrodes will enable more efficient electron transfer, thereby increasing the efficiency of electrochemical and bioelectrochemical devices. [11][12][13] In addition, the high surface area of porous electrodes is anticipated to facilitate the miniaturization of devices owing to their increased implantable capability. [16,17] Numerous approaches have been proposed for the fabrication of porous transparent electrodes, including nanoparticle casting, [18,19] salt precursor deposition, [20,21] etching, [19,22] and electrospinning. [23] Casting a nanoparticle via dip coating or spin coating is a low-cost, simple method to prepare porous TCOs. However, it cannot easily achieve precise control over the pore morphology, such as the pore size and size distribution. [10] TCOs of organized structures with a controlled morphology can be realized via template deposition methods, which exploit the self-assembly of soft templates, such as molecular cationic surfactant templates [24,25] or block copolymers, [20,26] with a solution of soft templates containing precursor salts for oxide formation. In this study, we employed sequential infiltration synthesis (SIS) as a new approach to fabricate porous TCO electrodes. SIS has recently emerged as a novel and attractive approach for the fabrication of inorganic-organic hybrid films and porous templated films.SIS is similar to template deposition methods in that both methods require polymer films spun on a substrate. However, the growth mechanisms of SIS differ from those of soft template deposition methods. The key mechanisms involved in SIS are as follows: 1) Infiltration of gas-phase precursor molecules into the polymer matrix, 2) coordination of the precursor molecules with a specific functional group of the polymer, and 3) a chemical reaction between the infiltrated precursor molecules Sequential infiltration synthesis (SIS) is an emerging technique for producinginorganic-organic hybrid materials and templated inorganic nanomaterials. The application space for SIS is expanding rapidly in areas such as litho graphy, filtration, photovoltaics, antireflection, and triboelectricity, but not in the field of electrochemistry. This study performs SIS for the fabrication of porous, transparent, and electrically conductive films of indium zinc oxide (IZO) to evaluate their potential as an electrode for electrochemistry. The elec trochemical activity of IZOcoated electrodes is evaluated when th...

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Section: Resultsmentioning

confidence: 63%

Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis

Kim

Jeon

2022

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“…According to the literature survey, different approaches such as e-beam evaporation 16,17 , chemical vapor deposition (CVD) 18,19 , pulsed laser deposition (PLD) 20,21 , and radio frequency sputtering 22,23 , are employed in the fabrication of ZnO and WO3 films. The PLD technique, distinguished by its utilization of extraordinary vacuum conditions and prominent substrate temperatures, stands out as a cost-effective and an appropriate selection for the extensive manufacturing of ZnO and WO3 films 20 .…”

Section: Introductionmentioning

confidence: 99%

Comparative study of ZnO and WO3 thin films grown by pulsed laser deposition at similar substrate temperatures

Nath,

Mishra,

Chakrabarti

2024

Oxide-Based Materials and Devices XV

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In this work, zinc oxide (ZnO) and tungsten trioxide (WO3) thin films were grown by a pulsed laser deposition (PLD) technique at an elevated substrate temperature of 400ºC. The PLD technique involves using a high-intensity laser to vaporize and deposit material onto an n-type silicon (Si) substrate. The field emission gun scanning electron microscopy (FEG-SEM) was employed to visualize and characterize the morphology of the two samples viz., ADW4 and ADZn4. The grazing incidence X-ray diffraction (GIXRD) was used to assess the crystallite structure of the two thin films based samples. The study found that ADW4 exhibited a significantly smaller average crystallite size (6.48 nm) compared to ADZn4 (16.22 nm). The smaller crystallite size of ADW4 is noteworthy and indicates the potential presence of quantum confinement effects, which are crucial in the development of optoelectronic devices such as light-emitting diodes (LEDs), and photodetectors. The room-temperature photoluminescence (RTPL) emission peak for ADW4 and ADZn4 was found to be at 323 nm (3.84 eV) and 379 nm (3.27 eV), respectively, under an excitation wavelength of 300 nm. The RTPL spectra revealed that the peak at around 323 nm for ADW4 gradually shifted towards the ultra-violet (UV) region compared to ADZn4 (379 nm). Significantly, such blue emission is shifted towards the UV-A region in ADW4 suggesting that it could be used to produce UV-A LEDs, which have applications in disinfection, water purification, and UV curing processes.

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“…oxide with heavy zinc doping) system has attracted a great deal of interest for applications in TFT devices/TCO [14][15][16][17][18]. In previously reported literature [14][15][16][17][18], the atomic ratio of In:Zn have been studied at 3:2, 70: 30, 5:5, 70:30, and 70:30, respectively.…”

mentioning

confidence: 99%

“…In previously reported literature [14][15][16][17][18], the atomic ratio of In:Zn have been studied at 3:2, 70: 30, 5:5, 70:30, and 70:30, respectively. In 2 O 3 :Zn system has attracted much attention because of chemical and thermal stabilities in addition to properties comparable to those of ITO.…”

mentioning

confidence: 99%

Synthesis and optical properties of single-crystalline indium zinc oxide (IZO) nanowires via co-deposition and oxidation methods

Shi

Lin

et al. 2015

Vacuum

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Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

Cited by 10 publications

References 21 publications

Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis

Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis

Comparative study of ZnO and WO3 thin films grown by pulsed laser deposition at similar substrate temperatures

Synthesis and optical properties of single-crystalline indium zinc oxide (IZO) nanowires via co-deposition and oxidation methods

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