Preparation and characterization of MgF2 thin film by a trifluoroacetic acid method

Fujihara, Shinobu; Tada, Munehiro; Kimura, Takeshi

doi:10.1016/s0040-6090(97)00156-9

Cited by 73 publications

(42 citation statements)

References 7 publications

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“…[22] The difficulties in handling the fluorine sources, namely hazardous HF and F 2 gas, has been identified as the main problem in depositing fluoride thin films by CVD. [23] ALD is a special variant of the CVD technique. In the ALD method the gaseous precursors are alternately pulsed onto the substrates.…”

Section: Introductionmentioning

confidence: 99%

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Pilvi

Puukilainen

Munnik

et al. 2009

Chemical Vapor Deposition

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Yttrium fluoride (YF 3 ) is a dielectric material with good light transmittance between the ultraviolet (UV) and infrared (IR) range of wavelengths. In this paper we introduce the first use of the atomic layer deposition (ALD) of YF 3 thin films. The films are grown at 175-325 8C. Y(thd) 3 (thd ¼ 2,2,6,6-tetramethyl-3,5-heptanedionato) is used as a cation source and TiF 4 as a fluorine precursor. YF 3 film growth characteristics, together with structural, optical, and electrical properties, are studied. Various methods, such as spectrophotometry, X-ray diffractometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and elastic recoil detection analysis (ERDA) are applied to characterize the films. Electrical properties are analyzed from Al/YF 3 /indium-tin-oxide capacitor structures at room temperature. The growth rates of the films are between 1.1 and 1.7 Å per cycle. The films grown below 225 8C are amorphous, otherwise they are polycrystalline. The impurities detected in the YF 3 film are H, C, O, and Ti. The amount of all of these tends to decrease with increasing deposition temperature, and is only 3.0 at.-% at 325 8C. Permittivities of the films are around 6. The refractive indices are 1.51-1.59 (at l ¼ 580 nm), and high light transmittance is achieved from the UV to IR regions with the sample grown at 300 8C.

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Section: Introductionmentioning

confidence: 99%

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Pilvi

Puukilainen

Munnik

et al. 2009

Chemical Vapor Deposition

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“…[44] ALD could be the method-of-choice to produce optical multilayers, where precise thickness control is vital. A problem related to the deposition of fluoride films with ALD, or even with CVD, [45] has been a lack of a feasible fluorine source. Over ten years ago CaF 2 , ZnF 2 , and SrF 2 films were fabricated with ALD using HF as the fluorine source, obtained by thermally decomposing NH 4 F. [46] Nevertheless, HF is not a perfect choice for ALD because it etches glass and silicates, for example.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Pilvi

Puukilainen

Arstila

et al. 2008

Chemical Vapor Deposition

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Lanthanum fluoride is a vacuum ultraviolet (VUV) transparent material which is widely used in optical applications. An atomic layer deposition (ALD) process is developed for depositing lanthanum fluoride thin films for the first time. LaF 3 films are grown at 225-350 -C using La(thd) 3 and TiF 4 as precursors. The crystallinity, morphology, composition, thicknesses, and refractive indices of the films are analyzed by X-ray diffraction/reflection (XRD/XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), and UV-vis spectrophotometry. Electrical properties, such as permittivity and leakage current density, are also studied. An exceptionally high growth rate of about 5 Å per cycle is achieved at 225-250 -C. The films are polycrystalline, the refractive indices vary between 1.57 and 1.61, and the permittivity is 12.3. The impurities detected in the LaF 3 film are Ti, C, O, and H. The level of all of these tends to decrease with increase in the deposition temperature, and is only 3.5 at.-% at 350 -C.

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“…It is an insulator with a broad band gap. Magnesium fluoride is used extensively in optical thin films [19][20][21][22][23], for example, as anti-reflective coatings on glasses and as rutile seed for pigment applications [24] and for composite optical filters with titania [25]. It was also reported that magnesium fluoride, which played the role of a support for a number of oxide [26,27], metallic [28] and sulfide [29] phases, enabled syntheses of catalysts active for such reactions as decomposition and reduction of nitrogen oxides [30], hydrodechlorination of chlorofluorocarbons (CFC) [31] and hydrodesulfurization of thiophene [32,33].…”

Section: Introductionmentioning

confidence: 99%

Microwave-assisted synthesis of spherical monodispersed magnesium fluoride

Pietrowski

Wojciechowska

2007

Journal of Fluorine Chemistry

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Preparation and characterization of MgF2 thin film by a trifluoroacetic acid method

Cited by 73 publications

References 7 publications

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Microwave-assisted synthesis of spherical monodispersed magnesium fluoride

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Preparation and characterization of MgF2 thin film by a trifluoroacetic acid method

Cited by 73 publications

References 7 publications

ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

Microwave-assisted synthesis of spherical monodispersed magnesium fluoride

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ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors