Preparation and characterization of MoC x thin films

Haase, E.L.

doi:10.1007/bf00682660

Cited by 11 publications

(6 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The large (a = 0.6 nm) lattice parameter indicates that the atoms are located in the most dense 111 plane of a cubic B1 type lattice with the lattice parameter a = a0√2. B1 lattice is typical for the -MoC phase [15] with a lattice constant a0 = 0.42 nm, identified by XRD measurements on thicker films. STM measurements on both sets of thin films revealed rms roughness of 0.6-0.7 nm.…”

Section: Resultsmentioning

confidence: 92%

“…Single atoms ejected from the surface of molybdenum target react with carbon atoms within the acetylene molecules and the product is subsequently deposited on the substrate. The superconducting properties of MoCx samples strongly depend on the carbon concentration [15]. Varying the acetylene pressure at the sputtering we tuned the carbon concentration and obtained samples with the highest possible Tc.…”

Section: Methodsmentioning

confidence: 99%

“…The relative positions of the diffraction peaks are associated with a cubic crystallographic structure of the -phase of MoC with the atomic lattice constant a0 = 0.42 nm. This phase has the highest bulk critical temperature from the MoC phase diagram [15]. For our experiment, two types of substrates were used: monocrystalline c-cut sapphire (Al2O3) and [100] silicon (Si).…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case

Hašková

Kopčík

Szabó

et al. 2018

Applied Surface Science

View full text Add to dashboard Cite

Many disordered superconducting films exhibit smeared tunneling spectra with evident in-gap states. We demonstrated that the tunneling density of states in ultrathin MoC films is gapless and can be described by the Dynes version of the BCS density of states with a strong broadening parameter  accounting for the suppression of coherence peaks and increased in-gap states. The thinner the film, the lower the Tc and the superconducting energy gap  and the larger the  MoC films of 3 nm thickness deposited simultaneously on silicon and sapphire substrates reveal very similar scalar disorder, evidenced by the equal sheet resistance, but exhibit different superconducting characteristics of Tc,  and  suggesting that pair breaking responsible for the dissipation channel and the suppression of superconductivity originates on the film-substrate interface. It indicates that sapphire is a stronger pair breaker. Interface pair breaking can be operative in other cases as well.I.

show abstract

Section: Resultsmentioning

confidence: 92%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case

Hašková

Kopčík

Szabó

et al. 2018

Applied Surface Science

View full text Add to dashboard Cite

show abstract

“…In addition, stable crystalline molybdenum carbide films prepared by chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been found to contain either Mo 2 C and/or the δ-MoC 1−x phase. 45,46,47,48 Hence it seems plausible that both the O-covered Cterminated α-Mo 2 C(100) and the δ-MoC(100) surfaces may be stable at relevant steam reforming conditions, however, further studies are needed.…”

Section: Discussionmentioning

confidence: 99%

Steam Reforming on Transition-Metal Carbides from Density-Functional Theory

Vojvodić

2012

Catal Lett

View full text Add to dashboard Cite

A screening study of the steam reforming reaction on clean and oxygen covered early transitionmetal carbides surfaces is performed by means of density-functional theory calculations. It is found that carbides provide a wide spectrum of reactivities, from too reactive via suitable to too inert. Several molybdenum-based systems are identified as possible steam reforming catalysts. The findings suggest that carbides provide a playground for reactivity tuning, comparable to the one for pure metals.

show abstract

“…MoC films of 3 nm thickness were prepared by the reactive magnetron sputtering onto a Si substrate as described in [12,13]. The Ioffe-Regel parameter kFl was determined for all our thin MoC films [6,12] from the free-electron-model.…”

mentioning

confidence: 99%

Zeeman-driven superconductor-insulator transition in strongly disordered MoC films: Scanning tunneling microscopy and transport studies in a transverse magnetic field

et al. 2020

View full text Add to dashboard Cite

Superconductor insulator transition in transverse magnetic field is studied in the highly disordered MoC film with the product of the Fermi momentum and the mean free path kF*l close to unity. Surprisingly, the Zeeman paramagnetic effects dominate over orbital coupling on both sides of the transition. In superconducting state it is evidenced by a high upper critical magnetic field 2 , by its square root dependence on temperature, as well as by the Zeeman splitting of the quasiparticle density of states (DOS) measured by scanning tunneling microscopy. At 2 a logarithmic anomaly in DOS is observed. This anomaly is further enhanced in increasing magnetic field, which is explained by the Zeeman splitting of the Altshuler-Aronov DOS driving the system into a more insulating or resistive state. Spin dependent Altshuler-Aronov correction is also needed to explain the transport behavior above 2 .

show abstract

Preparation and characterization of MoC x thin films

Cited by 11 publications

References 16 publications

On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case

On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case

Steam Reforming on Transition-Metal Carbides from Density-Functional Theory

Zeeman-driven superconductor-insulator transition in strongly disordered MoC films: Scanning tunneling microscopy and transport studies in a transverse magnetic field

Contact Info

Product

Resources

About