Preparation and Characterization of NbxOy Thin Films: A Review

Emeka, Nwanna Charles; Imoisili, Patrick Ehi; Jen, Tien‐Chien

doi:10.3390/coatings10121246

Cited by 37 publications

(12 citation statements)

References 147 publications

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“…On the other hand, RESET transition, i.e., breaking of CF, is observed when n ox migrate towards the bottom electrode (BE). The positive SET voltage indicates that memristor acts as an n-type intrinsic semiconductor, which is in good agreement with the experimental studies on Nb 2 O 5 -based memristor [26] [27]. It is found that the memristor persists in the LRS state even though the applied voltage reduces to zero, which shows the non-volatile memory property of the device.…”

Section: Resultssupporting

confidence: 88%

Device-Circuit Co-design of Memristor-based on Niobium Oxide for Large-Scale Crossbar Memory

Kumar¹,

Yadav²,

Rawat³

2022

Preprint

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Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing; however, the sneak current through the unselected cells becomes a fundamental roadblock for their development as it results in misreading and high power consumption. In this regard, we investigate Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor, which combines inherent nonlinearity of NbO2 switching layer and non-volatile operation of Nb2O5−x memory layer in a single device. The results show that Pt/Ti/NbO2/Nb2O5−x/Pt memristor offers the sneak current of 310 nA, selectivity of around 174, and on/off current ratio of 4.79 compared to the sneak current of around 70 µA, selectivity of about 4.02, and on/off current ratio of around 1.55 for Pt/Ti/Nb2O5−x/Pt-based memristor. Our self-selective memristor minimizes the sneak current, but a small on/off current ratio limits their readout margin and power efficiency for crossbar array size greater than 212. Further, we demonstrate that breaking down a large-scale crossbar array into smaller subarrays and separating them by transistor switches is a more efficient way of eliminating the sneak current. The memristor-transistor split crossbar architecture essentially provides the readout margin and power efficiency of subarray for large size crossbar array and allows high-density array integration over 1Transistor-1Memristor architecture.

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Section: Resultssupporting

confidence: 88%

Device-Circuit Co-design of Memristor-based on Niobium Oxide for Large-Scale Crossbar Memory

Kumar¹,

Yadav²,

Rawat³

2022

Preprint

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“…The large standard deviation calculated for the characteristics of these devices may be attributed to the extremely high boiling point of NbOx, which the PVD deposition of this material undergoes at high temperature. This in turn implies exposure of the absorber layer to elevated temperatures, which may lead to its partial thermal degradation [42]. To sum up, although PVD is not an optimal method for NbOx deposition, a thickness of 30 nm leading to moderate efficiencies of the PSCs was confirmed as optimal for this material.…”

Section: Resultsmentioning

confidence: 99%

Combination of Metal Oxide and Polytriarylamine: A Design Principle to Improve the Stability of Perovskite Solar Cells

Tepliakova

Mikheeva²,

Somov³

et al. 2021

Energies

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In the last decade, perovskite photovoltaics gained popularity as a potential rival for crystalline silicon solar cells, which provide comparable efficiency for lower fabrication costs. However, insufficient stability is still a bottleneck for technology commercialization. One of the key aspects for improving the stability of perovskite solar cells (PSCs) is encapsulating the photoactive material with the hole-transport layer (HTL) with low gas permeability. Recently, it was shown that the double HTL comprising organic and inorganic parts can perform the protective function. Herein, a systematic investigation and comparison of four double HTLs incorporating polytriarylamine and thermally evaporated transition metal oxides in the highest oxidation state are presented. In particular, it was shown that MoOx, WOx, and VOx-based double HTLs provided stable performance of PSCs for 1250 h, while devices with NbOx lost 30% of their initial efficiency after 1000 h. Additionally, the encapsulating properties of all four double HTLs were studied in trilayer stacks with HTL covering perovskite, and insignificant changes in the absorber composition were registered after 1000 h under illumination. Finally, it was demonstrated using ToF-SIMS that the double HTL prevented the migration of perovskite volatile components within the structure. Our findings pave the way towards improved PSC design that ensures their long-term operational stability.

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“…Moreover, in these areas, a melting and recrystallization process is evidenced by plate-like grains and low-angle junctions. This effect is most probably caused by the lower melting temperature of Nb2O5 of 1512 °C [23]. The ZHCNYb sample also shows a heterogeneous microstructure, with grains of an average size of 6.53 ± 4.24 μm and intergranular pores.…”

Section: Microstructurementioning

confidence: 99%

Phase Formation in Heterovalent Equimolar Quinary Oxide Systems of ZrO2-HfO2-CeO2-Nb2O5-RE2O3 Type (RE = Y, Yb, Nd, Gd)

Surdu

Andronescu

2021

Ceramics

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Tailoring electrical and mechanical properties in the fluorite oxides family is of great interest for technological applications. Other than doping and substitution, entropy-driven stabilization is an emerging technique for new solid solutions formation and enhancing or exploring new functionalities. However, there is a high number of possible combinations for higher-order diagram investigations, and the current state of the art shows limited possibilities in predicting phase formation and related properties. In this paper, we expand the compositional space of fluorite oxides in ZrO2-HfO2-CeO2-Nb2O5-RE2O3 systems. X-ray diffractometry and scanning electron microscopy measurements showed the formation of cubic fluorite-type structures when processing compositions at 1600 °C.

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Preparation and Characterization of NbxOy Thin Films: A Review

Cited by 37 publications

References 147 publications

Device-Circuit Co-design of Memristor-based on Niobium Oxide for Large-Scale Crossbar Memory

Device-Circuit Co-design of Memristor-based on Niobium Oxide for Large-Scale Crossbar Memory

Combination of Metal Oxide and Polytriarylamine: A Design Principle to Improve the Stability of Perovskite Solar Cells

Phase Formation in Heterovalent Equimolar Quinary Oxide Systems of ZrO2-HfO2-CeO2-Nb2O5-RE2O3 Type (RE = Y, Yb, Nd, Gd)

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