Preparation and characterization of PbFe12−xGaxO19 single crystals

Several growing modes including the bottom growth, the growth on a thermocouple ball and the top seeded growth, were tested to grow BaFe,,_zxMg,Ti,O,g and BaFe,,-,Ga,O,, magnetoplumbite single crystals from the Na,O-BaO flux. Disadvantages of the bottom growth, inhomogeneities, inclusions, difficult separation of the crystals were restricted by using of the top-seeded growth and by optimization of the ACRT program.

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Application of various modes on the growth of magnetoplumbite single crystals from the Na₂OBaO flux

Pollert

Durčok

Matêjková

et al. 1990

Cryst. Res. Technol.

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Optical properties of Ga-substituted magnetoplumbites

Široký¹,

Schmidt

Lukeš

et al. 1984

Phys. Stat. Sol. (a)

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The optical properties of Ga‐substituted magnetoplumbites are studied by ellipsometry and by light reflectivity measurements. Ellipsometrical analysis is presented supposing that the samples are homogeneous absorbing anisotropic crystals with smooth surfaces. Data obtained from experiments are combined in a Kramers‐Kronig analysis to deduce the spectral dependences of the real and imaginary parts of the permittivity. The discussion is based on the assumption that the optical spectra are given by a simple sum of the ionic contributions.

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Influence of the donor density on the photoelectrochemical properties of the magnetoplumbite PbFe₁₂O₁₉

Doumerc

Pollert

1986

Zeitschrift anorg allge chemie

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Influence of the donor density ND on photoelectrochemical properties has been investigated on single crystals of pure and Ti or Sm‐doped PbFe12O19. Apparently due to a large enough value of the Helmholtz layer capacitance CH the intersection of Mott‐Schottky plots U0 with the potential axis does not vary with ND and the flat band potential can be taken equal to U0. The deviations from linear dependence observed for Mott‐Schottky plots are ascribed to a gradual ionization of shallow and deep donors. The present investigation finally leads to an electron affinity of EA = 4.1 ± 0.2 eV. The evolution with ND of the I–U characteristics in the darkness may be explained by an increase of tunneling probability with ND while under illumination it may be attributed to the variations of two competing parameters: width of the space layer and magnitude of the electrical field at the interface.

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Preparation and characterization of PbFe12−xGaxO19 single crystals

Cited by 9 publications

References 3 publications

Application of various modes on the growth of magnetoplumbite single crystals from the Na₂OBaO flux

Application of various modes on the growth of magnetoplumbite single crystals from the Na₂OBaO flux

Optical properties of Ga-substituted magnetoplumbites

Influence of the donor density on the photoelectrochemical properties of the magnetoplumbite PbFe₁₂O₁₉

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Preparation and characterization of PbFe12−xGaxO19 single crystals

Cited by 9 publications

References 3 publications

Application of various modes on the growth of magnetoplumbite single crystals from the Na2OBaO flux

Application of various modes on the growth of magnetoplumbite single crystals from the Na2OBaO flux

Optical properties of Ga-substituted magnetoplumbites

Influence of the donor density on the photoelectrochemical properties of the magnetoplumbite PbFe12O19

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Product

Resources

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Application of various modes on the growth of magnetoplumbite single crystals from the Na₂OBaO flux

Application of various modes on the growth of magnetoplumbite single crystals from the Na₂OBaO flux

Influence of the donor density on the photoelectrochemical properties of the magnetoplumbite PbFe₁₂O₁₉