Preparation and characterization of polymer composite multilayers on SiO2

Trotter, Heather; Zaman, Abbas A.; Partch, Richard

doi:10.1016/j.jcis.2004.12.004

Cited by 18 publications

(18 citation statements)

References 19 publications

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“…These results are also similar to those of Penta et al 22 and Trotter et al 36 who used a centrifugal washing method similar to ours and analyzed the total organic content in the supernatant.…”

Section: P39supporting

confidence: 92%

Ceria-Based Slurries for Non-Prestonian Removal of Silicon Dioxide Films

Korkmaz

Babu

2014

ECS J. Solid State Sci. Technol.

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A slurry with a non-Prestonian dependence on the polishing pressure can help in minimizing dishing and erosion during shallow trench isolation chemical mechanical planarization. Here, we show that ceria-based slurries containing diallyldimethylammonium chloride (DADMAC) yield a non-Prestonian blanket film polish rate with a low threshold pressure (1-2 psi) when polishing plasma-enhanced chemical vapor (PECVD) tetraethylorthosilicate (TEOS) deposited oxide as well as thermal oxide films. The polishing mechanism of this non-Prestonian slurry was investigated by a series of experiments involving zeta potential measurements, thermogravimetric analysis (TGA) and UV-vis spectroscopy and it was shown that more DADMAC molecules are adsorbed on silica particles (as oxide film representatives) than on ceria particles and the binding strength between DADMAC and silica is much higher than that with ceria surface. Shallow trench isolation (STI) is an ubiquitous complimentary metal-oxide semiconductor isolation process technology. Deposition of an isolation stack that contains 3 to 10 nm thick 1,2 thermally grown pad oxide on top of a silicon substrate followed by the deposition of either plasma-enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD) nitride layer (10 to 30 nm) 1 is the first step in the STI process. In the next step, active areas and isolation fields are determined by patterning the silicon nitride and silicon dioxide pad layers on the silicon substrate, followed by etching of trenches into the silicon substrate using the oxide/nitride stack as a mask. The trenches are then filled with oxide, employing high density plasma-enhanced chemical vapor deposition (PECVD) process using tetraethylorthosilicate (TEOS) as the source of silicon, because of its high gap-filling capacity. The deposited oxide not only fills the trenches but also generates an overfill, which needs to be removed. This is achieved through planarization of the oxide film topography by chemical mechanical planarization (CMP) using a slurry that produces a high oxide and very low nitride removal rates (RRs).In this STI process, major concerns include dishing within the oxide features resulting from over-polish as well as the erosion of the underlying nitride film and, in some cases, the details of the corner rounding near active areas. Therefore, optimization of the CMP process is crucial in order to achieve complete removal of the oxide on top of the nitride film with good planarity and uniformity and to avoid erosion and dishing during the CMP process. 3,4 One method that can be used to minimize dishing and erosion during STI CMP is to control the polishing performance by using a slurry that shows a non-Prestonian polishing behavior. Non-Prestonian behavior occurs when there is a non-linear relationship between applied polishing pressures and resulting polishing rates. Here we consider only the effect of pressure and not that of the rotational velocity on the blanket film polish rates.Several models were di...

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Section: P39supporting

confidence: 92%

Ceria-Based Slurries for Non-Prestonian Removal of Silicon Dioxide Films

Korkmaz

Babu

2014

ECS J. Solid State Sci. Technol.

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“…Multilayers made of poly(styrenesulfonate) (PSS), poly(allylamine) (PAH), chitosan and alginate have been most widely used to prolong the permeation of target compounds [15][16][17]. Today such systems have extremely high potential in the pharmaceutical area to encapsulate real drugs rather than model molecules [18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Hepatic-targeting microcapsules construction by self-assembly of bioactive galactose-branched polyelectrolyte for controlled drug release system

Zhang

Chen

et al. 2008

Journal of Colloid and Interface Science

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“…Methods employed have included deposition of the coating by non-solvent addition, otherwise called coacervation, to precipitate the preformed dissolved polymer from solution wherein the cores are dispersed [27], assembly of polyelectrolytes on cores having oppositely charged surfaces [28,29] in situ free radical polymerization of vinyl monomers in a dispersion of cores initiated by dissolved initiator [13,[30][31][32][33][34][35][36][37]39,40], and condensation reactions to form polyether or polyester coatings [41,42]. None of these methods result in the polymer coating covalently grafted to the core.…”

Section: Introductionmentioning

confidence: 99%