Preparation and characterization of pulsed laser deposited CdS/CdSe bi-layer films for CdTe solar cell application

Yang, Xiaoyan; Bao, Zheng; Luo, Run; Liu, Bo; Tang, Ping; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Li

doi:10.1016/j.mssp.2016.03.009

Cited by 31 publications

(17 citation statements)

References 23 publications

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“…By optimizing the CdSe NC layer thickness and annealing temperature, a PCE of 5.81% was obtained in the champion devices. From the EQE spectrum, one can see that the device showed a good spectrum response in the short and long wavelength regions, which is in accordance with the previous report [41]. Due to the toxicity of the Cd element, using safer salts (such as NaCl, KCl or NH 4 Cl) instead of CdCl 2 during the processing steps is believed to be important for decreasing the Cd contamination during the NC solar cells fabrication [8,[47][48][49].…”

Section: Improving P-n Junction Quality By Using An N-type Nc Partnersupporting

confidence: 87%

“…However, as the diffusion of Se into Te occurs more easily than S into Te, a CdSe x Te 1−x alloy layer can be easily formed when growing and post-treating the CdTe/CdSe thin film [39,40]. Due to the "light bowing" effects, CdSe x Te 1−x shows a narrower bandgap than that of CdTe, which will extend the spectrum response to a longer wavelength [41,42], and a higher J sc is expected in this case. The CdTe/CdSe solar cells prepared through magnetron sputtering techniques show a high efficiency of 15.2% coupled with a high J sc of 26.3 mA/cm 2 [43].…”

Section: Improving P-n Junction Quality By Using An N-type Nc Partnermentioning

confidence: 99%

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Building Solar Cells from Nanocrystal Inks

Luo

Xie

et al. 2019

Applied Sciences

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The use of solution-processed photovoltaics is a low cost, low material-consuming way to harvest abundant solar energy. Organic semiconductors based on perovskite or colloidal quantum dot photovoltaics have been well developed in recent years; however, stability is still an important issue for these photovoltaic devices. By combining solution processing, chemical treatment, and sintering technology, compact and efficient CdTe nanocrystal (NC) solar cells can be fabricated with high stability by optimizing the architecture of devices. Here, we review the progress on solution-processed CdTe NC-based photovoltaics. We focus particularly on NC materials and the design of devices that provide a good p–n junction quality, a graded bandgap for extending the spectrum response, and interface engineering to decrease carrier recombination. We summarize the progress in this field and give some insight into device processing, including element doping, new hole transport material application, and the design of new devices.

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Section: Improving P-n Junction Quality By Using An N-type Nc Partnersupporting

confidence: 87%

Section: Improving P-n Junction Quality By Using An N-type Nc Partnermentioning

confidence: 99%

Building Solar Cells from Nanocrystal Inks

Luo

Xie

et al. 2019

Applied Sciences

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“…In addition, Yang et al . 5 6 have shown that using CdS/CdSe window layer stacks in CdTe solar cells increases the PCE compared with traditional CdS window layers. A detailed microscopic understanding in the growth, formation and photoactivity of the CdTe x Se 1− x alloy layer formed when CdTe is deposited on CdSe is necessary to optimize the fabrication of Se-induced bandgap-graded CdTe solar cells and further increase solar property parameters, such as the open-circuit voltage ( V oc ), fill factor (FF) and the overall PCE of CdTe solar cells using Se diffusion.…”

mentioning

confidence: 99%

Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells

et al. 2016

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The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1−x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1−x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1−x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1−x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.

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“…Different deposition methods have been used to form a CdTe 1−x Se x layer. In conventional superstrate configuration, CdSe can be deposited by high-vacuum evaporation [27], magnetron sputtering [14,16,47], or pulsed laser deposition [54], with CdTe 1−x Se x formation during CdCl 2 treatment. An alternative is close-space sublimation (CSS) of a CdTe 1−x Se x layer [15,19,29].…”

Section: Formation Of a Cdte 1−x Se X Layer During Device Processingmentioning

confidence: 99%

“…Further JSC increase is due to a shift in band gap with CdTe1−xSex (region 2 in Figure 4a). The JSC is therefore very similar to a CdSe/CdTe device, while the VOC is improved with the CdS layer in between the CdTe1−xSex and the TCO, which reduces the interface recombination (see Figure 4b) [20,54]. A CdS/CdSe/CdTe structure also works in substrate configuration solar cells (Figure 2e).…”

Section: Cdse/cdte Devices With a Cds Window Layermentioning

confidence: 99%

Review of CdTe1−xSex Thin Films in Solar Cell Applications

2019

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Recent improvements in CdTe thin film solar cells have been achieved by using CdTe1−xSex as a part of the absorber layer. This review summarizes the published literature concerning the material properties of CdTe1−xSex and its application in current thin film CdTe photovoltaics. One of the important properties of CdTe1−xSex is its band gap bowing, which facilitates a lowering of the CdTe band gap towards the optimum band gap for highest theoretical efficiency. In practice, a CdTe1−xSex gradient is introduced to the front of CdTe, which induces a band gap gradient and allows for the fabrication of solar cells with enhanced short-circuit current while maintaining a high open-circuit voltage. In some device structures, the addition of CdTe1−xSex also allows for a reduction in CdS thickness or its complete elimination, reducing parasitic absorption of low wavelength photons.

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Preparation and characterization of pulsed laser deposited CdS/CdSe bi-layer films for CdTe solar cell application

Cited by 31 publications

References 23 publications

Building Solar Cells from Nanocrystal Inks

Building Solar Cells from Nanocrystal Inks

Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells

Review of CdTe1−xSex Thin Films in Solar Cell Applications

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