Preparation and Characterization of r.f. Magnetron Sputtered Porous ZnO Thin Films

Srinivasarao, K.; Prameela, Ch.; Kala, P. V.; Mukhopadhyay, P.K.

doi:10.1016/j.matpr.2015.10.063

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…Figure 1d presents the EDS spectrum of the 2 at.% Mo:ZnO thin films deposited at 673 K. The stoichiometric ratio of 1 at.% Mo was maintained in the films deposited at the higher deposition temperature of 673 K. The overall EDS spectrum results indicated that at lower substrate temperatures, the mobility of the deposited atoms was low, which resulted in low reactivity between the atomic species, leading to oxygen and dopant atom deficiency. However, at higher substrate temperatures, the mobility of the deposited atoms was high, which enhanced reactivity between the atomic species and resulted in the stoichiometric films of 1, 1.5, and 2 at.% Mo [17]. The aforementioned results were supported by the observation of two optical transitions for the films doped with 1 and 2 at.% Mo in ZnO and deposited at 473 K. The atomic percentages of Zn, oxygen, and Mo in the films deposited at different conditions are provided in Table 1.…”

Section: Compositional Analysismentioning

confidence: 99%

Physical investigations on transparent conducting Mo:ZnO thin films

Srinivasarao

Mohanbabu²,

Mukhopadhyay

2018

Adv Compos Hybrid Mater

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Molybdenum (Mo)-doped zinc oxide (ZnO) thin films were deposited by radio frequency (r.f.) magnetron sputtering on quartz and Si (100) substrates at two different substrate temperatures (473 and 673 K) and at a fixed combined partial pressure 5 Pa of Argon and O 2 . The atomic percentage (at.%) of (Mo) in ZnO was increased from 1 to 2 at.%. The results of X-ray diffraction revealed that the ZnO films deposited at 5 Pa at a substrate temperature of 473 K were highly c-axis oriented with a predominant (002) crystallographic orientation. The intensity of (002) decreased with an increase in the atomic percentage of Mo. Moreover, a growth in the (100), (101), (220), and (103) orientations was observed. The energy-dispersive spectrum (EDS) of the Mo:ZnO films deposited at 5 Pa and 473 K was substoichiometric, whereas the films deposited at 673 K were nearly stoichiometric. The surface morphology of the ZnO films is porous when deposited at 473 K. The optical energy gap of the ZnO films deposited at 473 K increased from 3.11 to 3.64 eV with an increase in the atomic percentage of Mo. The electrical resistivity of the ZnO films decreased from 1.7 × 10 −4 to 6.7 × 10 −5 Ωm with an increase in the substrate temperature and atomic percentage of Mo. The thickness of the films measured by spectroscopic ellipsometry is 440 nm.

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Section: Compositional Analysismentioning

confidence: 99%

Physical investigations on transparent conducting Mo:ZnO thin films

Srinivasarao

Mohanbabu²,

Mukhopadhyay

2018

Adv Compos Hybrid Mater

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“…In addition to this, quartz are easily available at large area production with low cost. Quartz has been extensively used for different type of materials in the form of thin films, especially growing by sputtering, as a substrate [21][22][23][24][25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

N2 Gaz Akiş Hizinin, Sputter Tekni̇ği̇nden Elde Edi̇len İndi̇yum-Galyum-Ni̇trür Üçlü İnce Fi̇lmi̇ni̇n Opti̇k, Yapisal Ve Morfoloji̇k Özelli̇kleri̇ne Etki̇si̇ni̇n İncelenmesi̇

Erdoğan

Kundakçı

2018

Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi

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In this research work, InGaN (Indium Gallium Nitride) triple compound was grown under different N 2 gas flow rates by using sputtering technique. The structural, optical and morphological characteristics of the InGaN compound have been studied in detail. In the XRD analysis, films exhibited hexagonal crystal structure. The films appear at lower wavelengths in visible region and absorption values begin to increase sharply from about 550-560 nm and reach the highest absorption value in the Near-UV region. When gas flow rates increased, the optical band gaps of the film increased. In SEM, the film exhibits dense coverage of the material on the surface of the substrate without the presence of voids, pinholes or cracks. In the results of the AFM, there are locally peaks and valleys, and partially homogeneous and circular-like clusters are arranged. Films are suitable structures for use in device applications.

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