Preparation and characterization of slurry for chemical mechanical planarization (CMP)

Seo, Jihoon; Paik, Ungyu

doi:10.1016/b978-0-08-100165-3.00011-5

Cited by 24 publications

(30 citation statements)

References 55 publications

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“…Abrasive particle is not only one of the main components in CMP slurries ( Table 1) [16,17], but also a common contaminant observed after all CMP processes (Figure 2a) [13]. Silica and ceria have been widely employed as abrasive particles for CMP processes [16]. The adsorption of silica abrasives on the films is driven by the electrostatic attractive forces between abrasives and films in a certain pH range.…”

Section: Residual Abrasive Particlesmentioning

confidence: 99%

“…CMP consumables themselves can be the source of the contaminants during polishing and cleaning [13]. CMP slurries for the dielectric process are mainly composed of abrasive particles, pH adjuster, dispersant, passivation agent for high selectivity, and deionized water (DIW) [16] Metal CMP slurries contain the additional chemical reagents like oxidizer, chelating agent, corrosion inhibitor, etc. to control the electrochemical behaviors of metal films during polishing [16,17].…”

Section: Introductionmentioning

confidence: 99%

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Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Seo¹

2021

Emerging Contaminants

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Chemical mechanical planarization (CMP) process has been widely used to planarize a variety of materials including dielectrics, metal, and semiconductors in Si-based semiconductor devices. It is one of the most critical steps to achieve the nanolevel wafer and die scale planarity. However, various contaminants are observed on the wafer surfaces after the CMP process, and they become the most critical yield detractor over many generations of rapidly diminishing feature sizes because they have the most direct impacts on device performance and reliability. This book chapter provides (1) CMP consumables-induced contaminants such as residual particles, surface residues, organic residues, pad debris and metallic impurities, pad contamination, watermark, etc., (2) brush-induced cross-contamination during post CMP cleaning, (3) post-CMP cleaning for removing these contaminants. Fundamental understanding of the formation of various types of CMP contaminants and their characteristics will significantly benefit the development of next-generation CMP slurries and post-CMP cleaning solutions.

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Section: Residual Abrasive Particlesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Seo¹

2021

Emerging Contaminants

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“…Copper (Cu) and tantalum (Ta) are widely used as interconnect and barrier material respectively. 3 Cu having extremely promising characteristics, such as low resistivity and high electron migration resistance, have been given precedence over aluminum for interconnects. 4 Due to higher mobility, Cu poses a tendency to diffuse in silicon (Si) and Si-based materials.…”

Section: Introductionmentioning

confidence: 99%

Urea as a complexing agent for selective removal of Ta and Cu in sodium carbonate based alumina chemical–mechanical planarization slurry

Shukla

Selvam

Manivannan

2022

JSCS

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This work reports urea as a promising complexing agent in sodium carbonate (Na2CO3) based alumina slurry for chemical mechanical planarization (CMP) of tantalum (Ta) and copper (Cu). Ta and Cu were polished using Na2CO3 (1 wt.%) with alumina (2 wt.%) in the presence and absence of urea. The effect of slurry pH, urea concentration, applied downward pressure and platen rotational speed were deliberated and the outcomes were conveyed. Prior to the addition of urea, Ta removal rate (RR) was observed to enhance with pH from acidic to alkaline having maximum RR at pH 11. However, Cu RR decreases with increasing pH with minimum RR at pH 11. With the addition of urea in the slurry, Cu to Ta removal rate selectivity of nearly 1:1 is encountered at pH 11. The addition of urea boosts the Ta RR and suppresses Cu RR at the same time at 11 pH, as it adsorbs on the metal surface. Potentiodynamic polarization was conducted to determine the corrosion current (Icorr) and the corrosion potential (Ecorr). The electrochemical impedance spectroscopy (EIS) of both the metals was carried out in the proposed formulation and the obtained outcomes were elaborated.

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“…Typical slurry components for dielectric and metal CMP processes are summarized in Table 1. Slurry formulations not only are different depending on the materials to be polished but also need to be optimized to meet the stringent process requirements [7,8]. Their characteristics dominate the various interactions that occur at the slurry/pad-wafer interface.…”

Section: Introductionmentioning

confidence: 99%

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Seo

2021

Journal of Materials Research

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As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which has continued to lag behind advances in technology. This review paper provides a comprehensive overview of various chemical and mechanical phenomena such as contact mechanics, lubrication models, chemical reaction that occur between slurry components and films being polished, electrochemical reactions, adsorption behavior and mechanism, temperature effects, and the complex interactions occurring at the wafer interface during polishing. It also provides important insights into new strategies and novel concepts for next‐generation CMP slurries. Finally, the challenges and future research directions related to the chemical and mechanical process and slurry chemistry are highlighted.

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Preparation and characterization of slurry for chemical mechanical planarization (CMP)

Cited by 24 publications

References 55 publications

Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Urea as a complexing agent for selective removal of Ta and Cu in sodium carbonate based alumina chemical–mechanical planarization slurry

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

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