The present work reports the fabrication of p-Si/SiO 2 /TiO 2 and p-Si/SiO 2 /TiO 2 /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated by I − V , C-V measurements and VIS spectroscopy, respectively. The measurements reveal that I − V characteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. The I − V characteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO 2 /TiO 2 interlayer. K e y w o r d s: SIS heterostructures, thin films, Ga-doped ZnO, TiO 2 , Si, SIMS, I − V characteristics, spectroscopy