Preparation and characterization of unimorph actuators based on piezoelectric Pb(Zr0.52Ti0.48)O3 materials

Yin, Yi; Ye, Hui; Wang, Zhan; Liang, Hong; Ma, Haimin; Xu, Jian

doi:10.1016/j.sna.2011.09.012

Cited by 14 publications

(10 citation statements)

References 28 publications

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“…Lead zirconate titanate (PZT) thin films are widely used in MEMS transducers. (1)(2)(3)(4)(5)(6) PZT film forming methods include metal organic chemical vapor deposition (MO-CVD), (7) sputter deposition, (8) and the sol-gel method. (9) The last is widely used because of its good uniformity and simplicity.…”

Section: Introductionmentioning

confidence: 99%

Sol?Gel Deposition and Characterization of Lead Zirconate Titanate Thin Film Using Different Commercial Sols

Moriyama¹,

Totsu²,

Tanaka³

2019

Sensors and Materials

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The sol-gel technique is a major deposition method of lead zirconate titanate (PZT), because of its good uniformity and simplicity. At present, different PZT sols are commercially available, and users are interested in which sol best fits their application and deposition tool. In this study, PZT thin films were deposited using different commercial sols, and their characteristics were evaluated and compared in terms of film thickness, crystal orientation, and ferroelectric property. We found that a rapid thermal annealing (RTA) temperature of 650 ℃ and a drying temperature of 180 ℃ were suitable as starting conditions regardless of the PZT sol. Under these conditions, the piezoelectric constant d 31 is more than 75 pm/V. Optimization can be carried out efficiently by each user under these conditions.

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Section: Introductionmentioning

confidence: 99%

Sol?Gel Deposition and Characterization of Lead Zirconate Titanate Thin Film Using Different Commercial Sols

Moriyama¹,

Totsu²,

Tanaka³

2019

Sensors and Materials

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“…Lead-zirconium-titanate (PZT) films have been drawing much attention for applying to sensor, actuator, generator, and non-volatile memory devices due to their high piezoelectric and ferroelectric properties [1][2][3][4][5]. As an alternative processing to vacuum-based depositions, solution deposition has emerged as one of the most promising methods of ferroelectric films with perovskite structure because of low processing temperature, high simplicity of composition control, and large-area [6,7].…”

Section: Introductionmentioning

confidence: 99%

Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer

Tue

Shimoda

Takamura

2016

Ceramics International

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Sub-5µm pattern of sol-gel derived lead-zirconium-titanate (PZT) film with a thickness of 80-390 nm was successfully prepared on Pt(111)/TiO x /SiO 2 /Si (100) substrate by a novel lift-off process using solution-processed metal oxides as a sacrificial layer. The process is simply divided into three steps: In-Zn-O (IZO) sacrificial layer spin-coating and patterning, PZT film formation followed by lift-off process. The results suggested that the IZO layer is effective in preventing PZT crystallization because of its thermal stability during PZT post-annealing, and its barrier-effects between the spincoated PZT precursor and the Pt/TiO x substrate. Consequently, the micro-pattern of lift-off PZT exhibited better properties than that formed by wet-etching. In particular, the lift-off PZT films possessed better ferroelectric properties, higher breakdown voltage, and more well-defined shape than those of films patterned by conventional wet-etching. This lift-off process shows great promise for highly integrated devices due to its fine pattern-ability.

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“…There several piezoelectric materials used for microelectromechanical systems (MEMS) harvester, such as lead zirconate titanate (PZT), aluminum nitride (AlN). Most researches are focusing on the PZT thin films [9,10], but the high anneal temperature and high polarization voltage treatment make the preparation of PZT incompatible to MEMS and CMOS process [11]. By contrast, AlN is lead-free and has good temperature performance and can be prepared easily by magnetron sputtering method.…”

Section: Introductionmentioning

confidence: 99%

A vibration energy harvester using AlN piezoelectric cantilever array

Zhao

Shang

Luo

et al. 2015

Microelectronic Engineering

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Preparation and characterization of unimorph actuators based on piezoelectric Pb(Zr0.52Ti0.48)O3 materials

Cited by 14 publications

References 28 publications

Sol?Gel Deposition and Characterization of Lead Zirconate Titanate Thin Film Using Different Commercial Sols

Sol?Gel Deposition and Characterization of Lead Zirconate Titanate Thin Film Using Different Commercial Sols

Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer

A vibration energy harvester using AlN piezoelectric cantilever array

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