Preparation and characterization of ZnO:Al films by pulsed laser deposition

Zhao-Yuan, Ning; Cheng, Si; Ge, Shuibing; Chao, Yi Chieh; Gang, Zheng; Zhang, Y.X.; Liu, Z.G.

doi:10.1016/s0040-6090(97)00303-9

Cited by 80 publications

(31 citation statements)

References 9 publications

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“…Examples include the SolGel method, 2)4) chemical vapor deposition, 5),6) pulse laser deposition, 7), 8) electroless deposition, 9) radio frequency (RF) magnetron sputtering, 10),11) and direct current reactive (DCR) magnetron sputtering. 1) For DC and/or RF magnetron sputtering is the most common technique for forming metals' and compound thin films.…”

Section: ¹3mentioning

confidence: 99%

A new fabrication method for ZnO:Al thin films using modified DC magnetron sputtering

Horiuchi

Sonoda

2017

J. Ceram. Soc. Japan

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ZnO:Al thin film was deposited on glass substrates at room temperature. We used a ceramic ZnO:Al target. Since the oxygen vacancies were artificially introduced into the target, thin film could be deposited by DC magnetron sputtering. When ceramic targets are used, fabrication of transparent conductive ZnO:Al thin film in the facing-target is impossible, due to direct resputtering by oxygen anions. The substrate was colored yellow, and the conductivity was also lost. In this state, the thin film was considered to be "ZnO 1¹x :Al". In order to avoid the damage, we used a shield consisting of an upper plate, side plates, back plate and base plate. The substrate encapsulated in the assembled shield was placed on the anode in the magnetron sputter we used, the target was installed in the upper side of the chamber and the anode was installed in the under side. We also described the method of deciding the size of the shield. "Thermalized" sputter particles entered the channel consisting of upper plate, side plates and base plate, and are deposited on the substrate. The oxygen anions were blocked by the shield plates. The values of the resultant thin films were enumerated. Carrier concentration was 1.25 © 10 21 cm ¹3, a rather high value. Resistivity was 1.13 © 10 ¹3 ³ cm and Hall mobility was 4.43 cm 2 /Vs. Also in the area of high temperature superconductive oxides, thin films were damaged by resputtering by oxygen anions. A shield was also tried in this area. In such cases, simple metal plates were installed beneath the substrates in an off-axis position. Side shields were not installed beside the substrates. This confirmed the necessity of side shield plates. We removed the side shield plates and conducted sputtering. The carrier concentration was 6.92 © 10 19 cm ¹3, resistivity was 1.15 © 10 ¹2 ³ cm and Hall mobility was 7.86 cm 2 /Vs. Based on these values, the effectiveness of the side plates was confirmed.

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Section: ¹3mentioning

confidence: 99%

A new fabrication method for ZnO:Al thin films using modified DC magnetron sputtering

Horiuchi

Sonoda

2017

J. Ceram. Soc. Japan

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“…Thermal evaporation techniqe: ZnTe nanostructures have been synthesized by many methods such as chemical vapour deposition [65], radio frequency magnetron sputtering [66], reactive magnetron sputtering [67], chemical vapour deposition [68], sol-gel process [69], laser ablation [70] and spray pyrolysis [71] using different precursors [72,73]. Bhahada et al [74] have synthesized uniform ZnTe thin films by the thermal evaporation method.…”

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confidence: 99%

Zinc Telluride Thin Films: A Review

Soonmin¹,

Olusola²,

Sharma³

et al. 2018

Asian J. Chem.

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INTRODUCTIONExtensive research has been carried out on the deposition and characterization of polycrystalline thin films by several researchers . These materials are used in optical instruments, solar cells, telecommunications terminals, in-vehicle equipment, traffic lights, magnetic films, diamond films, microelectronic devices, solar selective coatings, sensor devices, optical mass memories and superconducting films. In recent years, binary semiconductor material such as zinc telluride has been studied by many scientists. Recent investigations have shown that zinc telluride thin films show absorption in the spectrum range from visible to near infrared (as widely reported in the literature). The II-VI (ZnTe) compound semiconductors have a direct transition at 2.26 eV. Therefore, ZnTe is capable of green light emission at 550 nm, i.e. in spectral region corresponding to the maximum sensitivity of the human eye. This makes ZnTe an appealing candidate for the production of bright light-emitting diodes and diode lasers. There are several reports available on the growth of zinc telluride thin films by different deposition methods such as electro-deposition method [33][34][35] Zinc telluride thin films can be used in a large variety of applications such as optoelectronics and microelectronics tools. In this paper, the growth of ZnTe films prepared by electrodeposition, thermal evaporation and closed space sublimation method with various precursors and some its physical properties of obtained zinc telluride films are discussed.

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“…7 According to different particle shape, size, crystal structure, crystal form and applications, there are different preparation methods such as magnetron sputtering, 8,9 spray pyrolysis, 10,11 atomic layer epitaxy, 12 molecular beam epitaxy 13,14 pulsed laser deposition, 15,16 sol-gel, 17,18 hydrothermal synthesis, [19][20][21][22] cathodic electrodeposition, [23][24][25] and so on. Among the various growth methods, cathodic electrodeposition represents a rapid and cost-effective approach to the fabrication of ZnO thin films microstructures, which is widely used in the laboratory and industrial production.…”

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confidence: 99%

Effects of Electrodeposition Electrolyte Concentration on Microstructure, Optical Properties and Wettability of ZnO Nanorods

Yao

Zhang

et al. 2015

J. Electrochem. Soc.

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ZnO nanorods were grown on ITO substrates with different concentration of electrolyte by electrodeposition method. Microstructure, surface topography, photoluminescence spectra, Raman spectra and water contact angle of the thin films were measured. The XRD results show all samples are hexagonal wurtzite and the intensity of diffraction peaks at (002) preferred orientation are strengthen as electrolyte concentration increase from 0.005 to 0.03 M. As the concentration increases, the average diameter, density and inclination of the ZnO nanorods increased. Room temperature photoluminescence spectras of the ZnO nanorods show a narrow UV band centering at about 377 nm and broad visible emissions around 600 nm and the UV peak intensity revealed a remarkable decreased. Raman spectras exhibit three peaks which are located at 439 cm −1 , 562 cm −1 and 1095 cm −1 . All samples change from hydrophobicity to hydrophilic after one hour ultraviolet (UV) irradiation. As an important wide bandgap (3.37 eV) semiconductor with a large exciton binding energy (60 meV), the wurtzite ZnO has triggered great interest in the past decade due to its great performance and potential applications in electro-optics, [23][24][25] and so on. Among the various growth methods, cathodic electrodeposition represents a rapid and cost-effective approach to the fabrication of ZnO thin films microstructures, which is widely used in the laboratory and industrial production.What's more, the wetting properties of ZnO thin films are very important from both fundamental and practical viewpoint. In recent years, ZnO thin films with special wetting properties have attracted much attention. Papadopoulou et al. 26 prepared hierarchically ZnO structures by irradiating silicon (Si) wafers with femtosecond laser pulses and subsequently coating them with ZnO by pulsed laser deposition. The ZnO thin films exhibit roughness at two length scales, and its surface wetting properties can be rapidly and reversibly switched between hydrophobicity and superhydrophilicity. He et al. 27 first put zinc foil oxidized in air and then deposited ZnO nanorods on zinc foil substrate by electrochemical deposition method, resulting in the formation of nanorods structures. The diameter of these nanorods are about 116 nm, and the films show an excellent superhydrophobicity. In this paper, ZnO nanorods were prepared within one step by cathodic electrodeposition method. In order to regulate the morphology of ZnO thin films, different amounts of Zn(NO 3 ) 2 •6H 2 O were added to the electrolyte. Microstructure, surface morphology and optical properties of the ZnO thin films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and microRaman spectroscope system. At last, wettability of the ZnO thin films and photoinduced hydrophilicity were tested through water contact angle apparatus. * Electrochemical Society Active Member.z E-mail: szq@ahu.edu.cn ExperimentalZnO thin films were prepared by three-electrode system, the electrochemical workstation (CHI600D) ...

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Preparation and characterization of ZnO:Al films by pulsed laser deposition

Cited by 80 publications

References 9 publications

A new fabrication method for ZnO:Al thin films using modified DC magnetron sputtering

A new fabrication method for ZnO:Al thin films using modified DC magnetron sputtering

Zinc Telluride Thin Films: A Review

Effects of Electrodeposition Electrolyte Concentration on Microstructure, Optical Properties and Wettability of ZnO Nanorods

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