Preparation and crystal structure analysis and physical properties of (LaO)CuTe

Electronic and Thermoelectric Properties of Layered Oxychalcogenides (BiO)CuCh (Ch = S, Se, Te)

“…Layered oxychalcogenides ( R O) TmCh (R = La, Ce, Nd, Pr, Bi; Tm = Cu, Ag; and Ch = S, Se, Te) have become attractive because of their transparent p-type semiconducting behavior . As the example, (LaO)­Cu Ch systems have wide bandgaps ( E g ) of 3.1, 2.8, and 2.3 eV for (LaO)­CuS, (LaO)­CuSe, and (LaO)­CuTe systems, respectively. It has also been shown that the E g of (LaO)­CuS 1– x Se x system can be tuned by adjusting x and the exciton emission can be emerged at room-temperature in the system .…”

Electrical and magnetic properties of LnOZnPn (Ln=rare earths; Pn=P, As, Sb)

“…One of these compounds, LaOCuS is a nonmagnetic and transparent p-type semiconductor with a band gap of 3.2 eV and a promising material for optical devices, because it has a strong exiton emission even at room temperature [2]. As a S site is substituted by other chalcogen elements, Se and Te in LaOCuS, the lattice parameter increases and the electrical resistivity decreases with increasing an atomic number of the chalcogen elements [3,4]. On the other hand, as a La site is substituted by other rare earth elements, Ce, Pr and Nd in LaOCuS, a paramagmetic behavior is observed [5,6].…”

Influence of Ch substitution on structural, electronic, and thermoelectric properties of layered oxychalcogenides (La0.5Bi0.5O)CuCh (Ch = S, Se, Te): a new insight from first principles

“…18,19 For example, the layered oxychalcogenides (LaO) CuCh show the wide bandgap (E g ) of 2.3 to 3.1 eV by substituting Ch from Te to S, providing potential applications in optoelectronics. [20][21][22][23][24][25] Also, the excitonic emission at RT has been observed. 26 Our previous report has shown that the dielectric constant (3 0 ), the optical dichroism, and the plasmonic states of (LaO)CuCh systems can be tuned by the Ch substitution.…”