Abstract:The oriented La modified PZT thin films were prepared on Pt/Ti/SiO2/Si substrate by the LB technique. The pre-sintering temperatures and the annealing temperatures for La modified PZT were determined by TG-DTA curves and XRD detect results. XRD detection of PZT and PZT with different La amount illustrated the crystal constructions and the effects by modification. The AFM observation of PLZT thin films with organic acid indicated that the LB technique could obtain smooth and flat film with the deposition of PLZ… Show more
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