Preparation and dielectric properties of polyvinyl alcohol (Co, Zn Acetate) Fiber/n-Si and polyvinyl alcohol (Ni, Zn Acetate)/n-Si Schottky diodes

Abstract

Dielectric properties and ac electrical conductivity (σ ac ) of Au/PVA(Co, Zn acetate)/n-Si and Au/PVA(Ni, Zn acetate)/n-Si Schottky diodes (SDs) have been investigated in dark and under illumination by using experimental capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at 1 MHz and room temperature. Experimental results indicate that the change in dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), the real (M') and imaginary (M'') parts of electric modulus and ac electrical conductivity (σ ac ) with illumination were found to change linearly with illumination level (P). On the other hand, the ε', ε'', tanδ and σ ac vs P have positive slope while the M' and M'' vs P have negative slope. Such behavior of dielectric properties and σ ac can be attributed to illumination induced electron-hole pairs under illumination effect in the depletion region of SDs. The obtained results under illumination suggest that these devices can be used as a sensor in optical applications.

Electrical conductivity and supercapacitor properties of polyaniline/chitosan/nickel oxide honeycomb nanocomposite

“…Activation energy is calculated from Figure , which shows two regions similar to other composites studied. The values are calculated using Arrhenius equation from Region 1 of low temperature region . Conductivity increases with an increase in temperature due to the polarons hopping from one localized state to another which is very clear from low values of the average hopping distance ( R HOP ) and average hopping energy between two sites ( W HOP ) in the composites.…”

“…At lower current densities [1–2 A/g] CPAESNI (2) is not showing symmetric nature in GCD profile [Figure (b)]. However, the CPAESNI sample, due to its honeycomb morphology, facilitates the movement of H + and ions through its channels and exhibits better reversibility at higher current densities . The GCD cycling curves have a nearly symmetric shape at high current densities [3–4 A/g], indicating that the composite has a good electrochemical capacitive characteristic and superior capacitive retention .…”

A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements

“…The electrical characteristics of metal-semiconductor (MS) and metal-insulator/polymer-semiconductor (MIS/ MPS) type Schottky barrier diodes (SBDs) have been extensively investigated due to their technological importance in technological applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The formation of barrier height (BH) and current conduction mechanism (CCM) in these diodes are dependent on various parameters such as interfacial layer at M/S interface, series and shunt resistances (R s and R sh ) of the diode, density of interface states (N ss ), doping acceptor/donor concentration of atoms (N a or N d ), the homogeneity and thickness of barrier height (BH) and interfacial layer, applied bias voltage (V a ) and sample temperature.…”

“…When an insulator or organic layer inserted at M/S interface, MS type diode converts to the MIS or MPS type diode. There are many polymers to use as interfacial layer, but among them organic polymers such as PVA [1][2][3][4], P2CIAn [5,6], PEDOT [7], polyindole [8] and perylene [9] have recently attracted great attention in applications. In addition, perylene and its derivatives belong to the one of the most widely studied classes of organic semiconductors.…”

“…Therefore, polymer based SBDs (MPS) are considered to raise increasing importance as these find a place in a wide variety of especially optoelectronic and high frequency applications due to easy processing cost. On the other hand, the process of surface preparation, formation of an insulator layer and BH at M/S interface and their homogeneity are more important [1][2][3][4][5][6][7][8][9].…”