Preparation and electric properties of BiFeO3 film by electrophoretic deposition

Liu, Kaihua; Cai, Wei; Fu, Chunlin; Kang, Lei; Xiang, Lian; Gong, Xianzu

doi:10.1016/j.jallcom.2014.03.161

Cited by 9 publications

(4 citation statements)

References 32 publications

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“…Many papers explain how BFO nanostructures can be made for various uses. There are a number of suggested deposition methods for expanding application of BFO films and powders [11]. Physical deposition techniques, have been used to generate BFO thin films with a wide range of morphologies [12].…”

Section: Introductionmentioning

confidence: 99%

DFT + U +V Investigation on Adsorption of Gas Molecules (CO, SO2, NO, and NO2) on Ni Doped Bismuth Ferrite Oxide (010)

Sambare,

Pawar,

Shirsat

2024

KEM

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The structural and electrical adsorption performance of carbon monoxide (CO), nitrous oxide (NO), nitrous dioxide (NO2), and sulphur dioxide (SO2) are explored using density functional theory calculations on Ni-doped atoms in the crystal structure of bismuth ferrite oxide (BFO). DFT+U+V offers a more complete description than either DFT or DFT+U alone. Good agreement with the experiments is obtained for both the band gap and the crystal field splitting. Ni-doped BFO (010) has adsorption energies of -0.35443 Ry for CO, -0.056076 Ry for NO, -5.64867 Ry for NO2, and -55.5483 Ry for SO2. Also, it was found that the energy of the band gap in pure BFO (010) can be lowered by adding Ni atoms. Further evidence from the DOS plot that Ni-doped BFO (010) may be considered as an emerging doped perovskite in high temperature gas sensing system for SO2 detection.

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Section: Introductionmentioning

confidence: 99%

DFT + U +V Investigation on Adsorption of Gas Molecules (CO, SO2, NO, and NO2) on Ni Doped Bismuth Ferrite Oxide (010)

Sambare,

Pawar,

Shirsat

2024

KEM

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“…Deposition of BFO thin films is achievable via numerous methods including both physical vacuum-based techniques such as pulsed laser deposition (PLD) [12,17,18], molecular beam epitaxy (MBE) [19], or sputtering [20][21][22] and chemical-based techniques such as chemical vapor deposition (CVD) [23], sol-gel or chemical solution deposition (CSD) [24][25][26][27][28][29], or electrophoretic deposition [30]. Previous reports on the phase stability of the BFO thin films mainly refer to PLD processing conditions where deposition pressure and temperature play an important role in the phase formation process while issues with impurities like Fe 2 O 3 and Bi 2 O 3 , as well as Bi evaporation were reported [9,18,31,32].…”

Section: Introductionmentioning

confidence: 99%

BiFeO3 thin films via aqueous solution deposition: a study of phase formation and stabilization

et al. 2015

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This paper reports a thorough microstructural investigation of bismuth ferrite (BFO) thin films subjected to various processing conditions and discusses their influence on the stability of the BiFeO 3 perovskite phase. The formation of secondary phases in BFO thin films is studied as a function of annealing temperature and time, film thickness, Bi excess, and Ti substitution. While films annealed at 600°C consist of the desired BiFeO 3 phase, higher temperatures induce the decomposition leading to a significant amount of secondary phases, particularly the iron-rich Bi 2 Fe 4 O 9 phase. A longer annealing time at 700°C further enhances the decomposition of BiFeO 3 . Qualitative microstructural analysis of the films is performed by electron backscattered diffraction which provides phase analysis of individual grains. The morphology of the single-crystalline Bi 2 Fe 4 O 9 grains that are embedded in the BiFeO 3 matrix drastically changes as a function of the film thickness. Nucleation of these Bi 2 Fe 4 O 9 grains probably occurs at the film/substrate interface, after which grain growth continues toward the surface of the film through the depletion of the BFO phase. Addition of Bi excess or the substitution of Fe with Ti in the precursor solutions significantly reduces the formation of an iron-rich secondary phase. Influence of the secondary phases as well as Ti substitution on magnetic properties of BFO films was investigated.

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“…The preparation and modification of BFO films have been extensively studied. At present, various techniques have been developed to fabricate BFO films, such as pulsed laser deposition [4], magnetron sputtering [5], molecular beam epitaxy [6], hydrothermal synthesis [7], electrophoretic deposition [8], and metal organic chemical vapor deposition [9]. Moreover, sol-gel method as an alternative route has been widely used to prepare BFO films [10,11] because of its low cost, easy to & Wei Cai caiwei_cqu@163.com adjust composition and integration with devices.…”

Section: Introductionmentioning

confidence: 99%

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

Lei

Cai

et al. 2015

J Mater Sci: Mater Electron

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BiFeO 3 (short for BFO) thin films with different grain sizes were fabricated via sol-gel spin-coating method. The effects of grain size on leakage behavior, dielectric, ferroelectric, piezoelectric properties and domain structure of BFO thin films have been investigated systematically. The X-ray diffraction results show that BFO thin films are rhombohedral distortion perovskite structure. Compared with the films annealed at 550°C, the grain size of BFO thin films annealed at 600°C is larger and the roughness is less, and the crystallinity and purity are higher. The leakage current density of BFO thin films with larger grain size is much lower than that of the films with smaller grain size. It is found that the conduction behavior of BFO thin films with smaller grain size transforms from Ohmic to space-charge-limited current and Fowler-Nordheim tunneling conduction as electric field increases. But there is the only transition from Ohmic conduction to space-charge-limited conduction for the thin films with larger grain size as electric field increase. The room temperature dielectric constant and remnant polarization of BFO thin films with larger grain size are higher than that of the films with smaller grain size. The ferroelectric domain size increases with the increase of grain size so that the ferroelectric polarization in BFO thin films with larger grain size enhances. Moreover, it is found that there are negatively charged ''tail to tail'' domain wall in BFO thin films with smaller grain size and positively charged ''head to head'' domain wall in the sample with larger grain size. The majority carriers including positively charged hole or oxygen vacancy assemble on negatively charged ''tail to tail'' domain wall in p-type BFO thin films with smaller grain size and result in relative higher leakage current. The piezoelectric coefficient of the films with larger grain size is much higher than that of the sample with smaller grain size.

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Preparation and electric properties of BiFeO3 film by electrophoretic deposition

Cited by 9 publications

References 32 publications

DFT + U +V Investigation on Adsorption of Gas Molecules (CO, SO<sub>2</sub>, NO, and NO<sub>2</sub>) on Ni Doped Bismuth Ferrite Oxide (010)

DFT + U +V Investigation on Adsorption of Gas Molecules (CO, SO<sub>2</sub>, NO, and NO<sub>2</sub>) on Ni Doped Bismuth Ferrite Oxide (010)

BiFeO3 thin films via aqueous solution deposition: a study of phase formation and stabilization

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

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