Preparation and formation mechanism of ZnS semiconductor nanowires made by the electrochemical deposition method

Xu, Xijin; Fei, Guang Tao; Yu, Wentao; Wang, Xuewei; Chen, Li; Zhang, Lide

doi:10.1088/0957-4484/17/2/013

Cited by 95 publications

(41 citation statements)

References 22 publications

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“…From Fig. 3a above, there were relatively narrower and stronger six diffraction peaks of (100), (002), (101), (110), (112), and (201) in the XRD [32]. That's to say, high-temperature calcinations successfully transformed low temperature state ZnS to high temperature state.…”

Section: Resultsmentioning

confidence: 84%

ZnS porous fluorescent nanostructures synthesized by a soft template approach

Yang

Zhao

2015

J Mater Sci: Mater Electron

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Porous ZnS precursors were prepared by soft template method and Soxhlet extraction method. We used three surfactants with different molecular weight, which included ODA, Pluronic P123, and Pluronic F127, as soft template agents. Nitrogen adsorption-desorption results indicated that larger molecular weight and larger amounts of the template agent made porous ZnS precursors with larger pore sizes and smaller specific surface areas. The final ZnS fluorescent samples were obtained through calcinations method in tube furnace. The emission peaks of ZnS porous fluorescent samples were approximately 490 nm because of zinc vacancy, which was similar to ZnS nanoparticles. However, the emission intensity of porous ZnS fluorescent samples was 2.3-fold greater than that of ZnS nanoparticles, because that the porous cavity can increase the utilization ratio of excitation light and cause more absorption of excitation light, improve the luminescent properties of ZnS phosphor.

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Section: Resultsmentioning

confidence: 84%

ZnS porous fluorescent nanostructures synthesized by a soft template approach

Yang

Zhao

2015

J Mater Sci: Mater Electron

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“…One of the most attracting features of nanowires (NWs) is that lattice mismatch or strain in NWs can be significantly relaxed due to their high surface/volume ratio and small lateral size. Different synthetic approaches have been used for the synthesis of ZnS nanomaterial, especially nanowires and nanorods; these methods include laser ablation [13], vapor transport in the presence [14] or in the absence of [15] catalyst, chemical vapor deposition (CVD) [16], electrochemical deposition [17] and solvothermal method [18]. Among them, CVD has got a number of advantages such as simplicity and the ability to use a wide variety of precursors such as liquid precursors, gaseous precursors, solid precursors which include halides, hybrids, metal-organic and organic.…”

Section: Introductionmentioning

confidence: 99%

Growth temperature dependence of VLS-grown ultra-long ZnS nanowires prepared by CVD method

2018

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The synthesis of ultra-long high-quality zinc sulfide (ZnS) nanowires of uniform size on heterogeneous substrates is highly desirable for investigating the fundamental properties of ZnS nanowires and for fabricating integrated functional nanodevices. The present study developed a novel technique for growing ultra-long ZnS nanowires on thin-catalyst-coated substrates. ZnS nanowires were synthesized by chemical vapor deposition on a silicon substrate deposited by gold (* 5 nm in thickness) as the catalyst at 550, 600, 700, 750 and 800°C. The structural properties of the samples were investigated by X-ray diffraction, and the results showed that the fabricated nanowires have both wurtzite and zinc blend structures. The morphological properties of the nanowires were determined by scanning electron microscopy, and the results show that the substrate is thoroughly coated with 10 lm of zinc sulfide nanowires. Increasing the substrate temperature from 600 to 800°C increased the diameter of the nanowires and decreased the length. The growth mechanism of the nanowires was vapor-liquid-solid. The EDX spectra of this sample showed an absence of contamination, confirming the high purity of the ZnS nanowires.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13] In particular, semiconducting and II-VI nanowires have drawn large interest because of the ability to synthesize them in diverse configurations and under varying conditions, in addition to their potential use in numerous electronic and optical devices. 1,2,6 Zinc sulfide (ZnS), a member of the wurtzite family, is a direct wide band gap (3.91 eV) II-VI semiconductor and a vital material in the field of photonics.…”

Section: Introductionmentioning

confidence: 99%

Growth of Ultralong ZnS/SiO₂ Core−Shell Nanowires by Volume and Surface Diffusion VLS Process

et al. 2008

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Nanowires of up to 1 cm in length and approximately 30 nm in diameter were synthesized through a simple chemical vapor deposition process. Scanning electron microscopy (SEM) data showed that these nanowires were well-aligned and grew in the direction along the flow of the carrier gas. Through transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis, the nanowires were found to be composed of a single-crystalline ZnS core and amorphous SiO 2 shell. Gold catalyst particles were found at the tips of the nanowires and completely encased by a silica shell. Photoluminescence (PL) measurements were performed on nanowire samples in which the synthesis time was systematically varied to provide information regarding growth dynamics. After a systematic study on the structure, we propose that the core-shell nanowires were formed via a distinct volume and surface diffusion process occurring simultaneously for different chemical species in and on the gold catalyst particle.

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Preparation and formation mechanism of ZnS semiconductor nanowires made by the electrochemical deposition method

Cited by 95 publications

References 22 publications

ZnS porous fluorescent nanostructures synthesized by a soft template approach

ZnS porous fluorescent nanostructures synthesized by a soft template approach

Growth temperature dependence of VLS-grown ultra-long ZnS nanowires prepared by CVD method

Growth of Ultralong ZnS/SiO₂ Core−Shell Nanowires by Volume and Surface Diffusion VLS Process

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Preparation and formation mechanism of ZnS semiconductor nanowires made by the electrochemical deposition method

Cited by 95 publications

References 22 publications

ZnS porous fluorescent nanostructures synthesized by a soft template approach

ZnS porous fluorescent nanostructures synthesized by a soft template approach

Growth temperature dependence of VLS-grown ultra-long ZnS nanowires prepared by CVD method

Growth of Ultralong ZnS/SiO2 Core−Shell Nanowires by Volume and Surface Diffusion VLS Process

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Growth of Ultralong ZnS/SiO₂ Core−Shell Nanowires by Volume and Surface Diffusion VLS Process