2019
DOI: 10.1016/j.surfcoat.2018.12.036
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Preparation and investigation of MoSi2/SiC coating with high infrared emissivity at high temperature

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Cited by 44 publications
(9 citation statements)
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“…Based on the thermal radiation theory, we consider that the high absorbance of the HEO powder is mainly due to the following reasons: lattice imperfection (oxygen vacancy) and small band gap ( E g ). The smaller E g is beneficial to the transition of electrons from the valence band (VB) to the conduction band (CB), which will increase the concentration of free carriers in the band gap and improve the infrared emissivity. The value of E g can be evaluated by using Tauc’s equation: where α is the absorbance, h ν is the photon energy, and k is the material-dependent constant.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Based on the thermal radiation theory, we consider that the high absorbance of the HEO powder is mainly due to the following reasons: lattice imperfection (oxygen vacancy) and small band gap ( E g ). The smaller E g is beneficial to the transition of electrons from the valence band (VB) to the conduction band (CB), which will increase the concentration of free carriers in the band gap and improve the infrared emissivity. The value of E g can be evaluated by using Tauc’s equation: where α is the absorbance, h ν is the photon energy, and k is the material-dependent constant.…”
Section: Results and Discussionmentioning
confidence: 99%
“…In the process of plasma spraying, the temperature of the plasma arc was about 10,000 °C [ 28 ], which is much higher than the oxidation temperature of MoSi 2 . Therefore, the raw materials are oxidized to form Mo 5 Si 3 , SiO 2 and Mo according to the Equations (1) and (2) [ 29 , 30 , 31 , 32 ]. SiO 2 is an amorphous phase, and its amount is relatively small; therefore, no SiO 2 phase is detected in XRD patterns.…”
Section: Resultsmentioning
confidence: 99%
“…Currently, diverse methods have been used to improve the high infrared radiation properties of coatings, such as compounding of radiation base materials, doping of impurity elements, and control of crystal morphology. 1,[13][14][15] Especially, ion doping may easily destroy the periodicity of the lattice and introduce surface oxygen vacancies (OVs) into the crystals, which are recognized as an efficient way to embellish the electronic structure and optical absorption property of materials. 16,17 As reported, the octahedral site preference energy of Ni 2+ is 22.8 kcal mol −1 , which is much higher than that of Cu 2+ (15.2 kcal mol −1 ) and Fe 3+ (0 kcal mol −1 ), 18,19 that is to say, the B site is more easily to be occupied by Ni 2+ if Ni 2+ and Cu 2+ are simultaneously introduced.…”
Section: Introductionmentioning
confidence: 99%