Preparation and Microwave Absorption Properties of Ti₃AlC₂ Synthesized by Pressureless Sintering TiC/Ti/Al

Abstract

The Ti3AlC2 powders were synthesized by pressureless sintering method at 1250–1400°C. It was found the powders synthesized at 1350°C had a higher purity. Dielectric and microwave absorption properties of the Ti3AlC2 powders were investigated in the frequency range from 8.2 to 12.4 GHz. The complex permittivity of the Ti3AlC2/paraffin decreased with increasing calcining temperature and decreasing Ti3AlC2 content. The minimum reflection loss of the Ti3AlC2/paraffin shifted to the lower‐frequency region by increasing the thickness. For the single‐layer Ti3AlC2/paraffin mixture with 70 wt% Ti3AlC2 content, the reflection loss values exceeding −10 dB were achieved when the thickness is 2.8 mm.

Structural Modifications and Electromagnetic Property Regulations of Ti3AlC2 MAX for Enhancing Microwave Absorption through the Strategy of Fe Doping

“…This proves that the doping ratio of x = 0.2 has slightly effect on the morphology of the sample. However, a small amount of TiC bulk particles with an average size of 3−8 µm is observed, [ 47 ] which is consistent with the XRD result. As a consequence of increasing Fe‐doped proportion, the new product of TiC grains was produced.…”

Effect of Few-Layer Ti3C2Tx Supported Nano-Ni via Self-Assembly Reduction on Hydrogen Storage Performance of MgH2

“…Because of the impurity of raw materials, a small diffraction peak at 2θ = 35.7°belonging to TiC can be found in the powder X-ray diffraction (XRD) pattern of Ti 3 AlC 2 (Figure 2a). 37 After the etching and delaminating processes, the main diffraction peaks of Ti 3 AlC 2 disappear, while the prominent diffraction peak at 2θ = 6.46°corresponding to the (002) plane 2+ /FL-Ti 3 C 2 T x have a similar Ti 2p XPS profile, indicating that the electron transfer between Ni 2+ ions and FL-Ti 3 C 2 T x does not destroy the composition of FL-Ti 3 C 2 T x . 40 The binding energy of Ti 2p in the Ni 30 2+ /FL-Ti 3 C 2 T x has a similar increase (+0.78 eV) compared with that in the FL-Ti 3 C 2 T x , which is also ascribed to the electron transfer between Ni 2+ ions and the functional groups (−OH, −O, and −F).…”

“…Because of the impurity of raw materials, a small diffraction peak at 2θ = 35.7° belonging to TiC can be found in the powder X-ray diffraction (XRD) pattern of Ti 3 AlC 2 (Figure a) . After the etching and delaminating processes, the main diffraction peaks of Ti 3 AlC 2 disappear, while the prominent diffraction peak at 2θ = 6.46° corresponding to the (002) plane of FL-Ti 3 C 2 T x appears, suggesting the successful preparation of FL-Ti 3 C 2 T x . , Different loads (20, 30, and 40 wt %) of Ni on FL-Ti 3 C 2 T x via self-assembly reduction are denoted as Ni 20 /FL-Ti 3 C 2 T x , Ni 30 /FL-Ti 3 C 2 T x , and Ni 40 /FL-Ti 3 C 2 T x .…”

Low‐temperature synthesis of high‐purity Ti 2 AlC powder by microwave sintering

“…In this sense, the formation of Ti 2 AlC can be obtained at low temperatures and in a short time. The formation mechanism was different from that in the previous work [16] and the reaction process can be expressed as follows: Fig. 2 shows the SEM images of the obtained samples.…”