Preparation and Microwave Dielectric Properties of Ba₃A(V₂O₇)₂ (A = Mg, Zn) Ceramics for ULTCC Applications

Abstract

Single phase Ba3A(V2O7)2 (A = Mg, Zn) ceramics were prepared through a conventional solid‐state ceramic route. The structural and microwave dielectric properties of Ba3A(V2O7)2 (A = Mg, Zn) compositions have been investigated. Powder X‐ray diffraction and Raman spectroscopic studies have been carried out to confirm the phase purity and crystal structure of prepared Ba3A(V2O7)2 (A = Mg, Zn) compositions. Scanning electron microscopic images for Ba3A(V2O7)2 (A = Mg, Zn) ceramics exhibit a homogeneous and dense microstructure. The microwave dielectric properties of the samples were studied using Hakki–Coleman post resonator and cavity perturbation methods. Ba3Mg(V2O7)2 ceramic has a dielectric constant (εr) of 10.3, quality factor (Q x f ) of 43400 GHz and temperature coefficient of resonant frequency (τf) of –46.87 ppm/°C at 660 °C for 1 h. Ba3Zn(V2O7)2 shows a dielectric constant of 10.8, quality factor of 46400 GHz and temperature coefficient of resonant frequency of –78.1 ppm/°C at 660 °C for 1 h. Ba3A(V2O7)2 (A = Mg, Zn) ceramics show excellent chemical compatibility with Al metal electrodes.

Advanced temperature sensing with Er3+/Yb3+ co-doped Ba2GdV3O11 phosphors through upconversion luminescence

“…The observed Raman bands can be attributed to various vibrational modes, including asymmetric stretching ( ν as ) and symmetric stretching ( ν s ) modes of O–V–O, ν s and ν as modes of V–O–V vibrations, as well as lattice (L′) vibrations. 73,74 The Raman bands observed between 880 to 953 cm −1 are linked to the ν s vibrations of vanadium groups, while the vibrations associated with the ν as modes of vanadium groups are found in the region of 800 to 878 cm −1 . In the range of 410 to 520 cm −1 , the observed Raman modes are attributed to both symmetric stretching and asymmetric stretching vibrations of the V–O–V bridge.…”

“…The observed Raman bands can be attributed to various vibrational modes, including asymmetric stretching (ν as ) and symmetric stretching (ν s ) modes of O-V-O, ν s and ν as modes of V-O-V vibrations, as well as lattice (L′) vibrations. 73,74 The Raman…”

Enhanced Microwave Dielectric Properties in Mg2Al4Si5O18 Through Cu2+ Substitution

“…The microwave dielectric materials can be used in many fields, such as antennas, duplexers, resonators and filters. [1][2][3] High performance materials for millimeter-wave communication should have a low dielectric constant (ɛ r ), high quality factor (Qf), near-zero temperature coefficient of resonance frequency (τ f ) and relatively low sintering temperature. [4][5][6][7] The low ɛ r value can reduce the signal delay, high Qf value can achieve the better selectivity, and the nearzero τ f value can improve stability.…”

“…In recent years, the microwave dielectric ceramics are indispensable materials in millimeter‐wave and even extending to THz band systems. The microwave dielectric materials can be used in many fields, such as antennas, duplexers, resonators and filters [1–3] . High performance materials for millimeter‐wave communication should have a low dielectric constant (ϵ r ), high quality factor (Qf), near‐zero temperature coefficient of resonance frequency (τ f ) and relatively low sintering temperature [4–7] .…”

SrZnV2O7: A low‐firing microwave dielectric ceramic with high‐quality factor

“…Table 3 lists the performance of reported vanadium-based ceramics. 16,17,[19][20][21][22][23]35,36 All the previously researched ceramics possessed low ST (<961°C), offering the possibility of utilizing LTCC technology. In comparison with other ceramics, SrZnV 2 O 7 ceramic possessed a competitive Qf value to ensure its frequency selectivity and a relatively small negative τ f value to be adjusted in future work.…”