Preparation and oxidation of Al4SiC4

Yamamoto, Osamu; Ohtani, Motoko; Sasamoto, Tadashi

doi:10.1557/jmr.2002.0113

Cited by 43 publications

(34 citation statements)

References 12 publications

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“…19) The first step begins with the reduction of SiO2 by carbon sources to generate SiO gas as shown in reaction (6) at the interface between SiO2 and C particles, which is an initial and endothermic reaction. (6) Once CO gas is formed as a by-product, SiO can also be generated according to exothermic reaction (7).…”

Section: Resultsmentioning

confidence: 99%

“…(6) Once CO gas is formed as a by-product, SiO can also be generated according to exothermic reaction (7).…”

Section: Resultsmentioning

confidence: 99%

“…4), 5) In contrast to this, mullite (3Al2O3·2SiO2) has an excellent high temperature corrosion resistance and thermal stability. 6), 7) Accordingly, the oxidation rate of Al4SiC4 was reported to be unaffected by the addition of water vapor due to the formation of dual oxide layers composed of mullite and alumina by a twostep process as following; 3) (1) (2) In addition, Al4SiC4 possesses higher compressive strength (~260 GPa) than SiC (~165 GPa) and also exhibits crack deflection along the plate-like grains, which is one of the characteristics of the materials having high fracture toughness. 8), 9) Due to the desirable properties of Al4SiC4 as described above, several researches have been performed about the powder synthesis, its densification and testing of mechanical/oxidation properties, etc.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of mono-phase, hexagonal plate-like Al4SiC4 powder via a carbothermal reduction process

Lee

Nishimura

et al. 2008

J. Ceram. Soc. Japan

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Mono-phase and hexagonal plate-like Al4SiC4 powders were successfully synthesized using a mixture of Al(OH)3, SiO2 and phenolic resin via the carbothermal reduction process. Two-step reaction was compartmentally observed during calcination; the carbothermal reduction of SiO2 between 1300 and 1600°C and that of Al2O3 above 1500°C. X-ray diffraction data indicated the orientation of the compacted powders along c-axis due to the stacking of plate-like Al4SiC4 powders. Microscopic observation showed that the synthesized powders were mainly hexagonal platelets. The main synthetic mechanism of the ternary carbide powder during the carbothermal reduction process was gas-solid reaction. Possible reaction mechanisms which are responsible for the synthesis of Al4SiC4 by the carbothermal reduction process are discussed.

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Section: Resultsmentioning

confidence: 99%

“…(6) Once CO gas is formed as a by-product, SiO can also be generated according to exothermic reaction (7).…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Synthesis of mono-phase, hexagonal plate-like Al4SiC4 powder via a carbothermal reduction process

Lee

Nishimura

et al. 2008

J. Ceram. Soc. Japan

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“…Al 4 SiC 4 and Al 4 Si 2 C 5 are low cost potential materials for high-temperature and weight sensitive applications due to its low density (3.03 g/cm 3 ), high melting point (~2253 K) and excellent oxidation resistance [2][3][4][5]. Both of them have hexagonal structures (P6 3 mc for Al 4 SiC 4 , 3 R m for Al 4 Si 2 C 5 ), and the crystallographic parameters were provided in detail by Inoue et al [6].…”

Section: Introductionmentioning

confidence: 99%

A theoretical study of dielectric tensor, Born effective charges, LO-TO splitting and infrared response of Al4SiC4 and Al4Si2C5

Xiao

Liang

et al. 2017

Journal of Alloys and Compounds

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“…This is expected to be universal for the KPZ surface on a flat substrate and may have relevance for the study of the GOE Dyson's Brownian motion. More detailed analysis and results for the discrete TASEP will be reported elsewhere [36].…”

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Spatial correlations of the 1D KPZ surface on a flat substrate

Sasamoto¹

2005

J. Phys. A: Math. Gen.

230

315

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We study the spatial correlations of the one-dimensional KPZ surface for the flat initial condition. It is shown that the multi-point joint distribution for the height is given by a Fredholm determinant, with its kernel in the scaling limit explicitly obtained. This may also describe the dynamics of the largest eigenvalue in the GOE Dyson's Brownian motion model. Our analysis is based on a reformulation of the determinantal Green's function for the totally ASEP in terms of a vicious walk problem.Surface growth has been an important subject of physics both from practical and fundamental aspects. While a good control of it is crucial in recent atom-scale technology, a rich variety of interesting surface pattern has attracted much attention of theoretical studies [1,2]. It is also important from the point of view of noneqilibrium statistical mechanics.It is in general difficult to obtain detailed information about the properties of surface by analytical methods. However in one spatial dimension some surface growth models are known to be exactly solvable. They are very special in many respects, but give us a lot of insight to understand the properties of surfaces in nature. The Kardar-Parisi-Zhang (KPZ) equation, introduced in [3], is one of the minimal models in the theory of surface growth which have both nonlinear and noise effects. A lot of models were shown to belong to the same universality class as the KPZ equation, i.e., the KPZ universality class [4]. But the analysis had been mainly restricted to the exponents for some time.A next breakthrough comes from an observation that some surface growth models, in particular the polynuclear growth (PNG) model, are related to combinatorial problem of Young tableaux [5]. In [6,7], the height fluctuation of the surface in the KPZ universality *

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Preparation and oxidation of Al₄SiC₄

Cited by 43 publications

References 12 publications

Synthesis of mono-phase, hexagonal plate-like Al<sub>4</sub>SiC<sub>4</sub> powder via a carbothermal reduction process

Synthesis of mono-phase, hexagonal plate-like Al<sub>4</sub>SiC<sub>4</sub> powder via a carbothermal reduction process

A theoretical study of dielectric tensor, Born effective charges, LO-TO splitting and infrared response of Al4SiC4 and Al4Si2C5

Spatial correlations of the 1D KPZ surface on a flat substrate

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