Preparation and photoluminescence of single-crystal zinc selenide nanowires

Zhu, Yanqing; Bando, Yoshio

doi:10.1016/s0009-2614(03)01197-7

Cited by 135 publications

(83 citation statements)

References 30 publications

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“…Metal selenides are wide band gap materials and have applications in light-emitting devices, solar cells, sensors, and optical recording materials [1] [2] [3] [4]. ZnSe is ideal material for blue-green laser diodes [1] [2], mid-IR laser sources for remote sensing applications [5], and in optically controlled switching devices due to its large photo resistivity [6].…”

Section: Introductionmentioning

confidence: 99%

Composition and Band Gap Controlled AACVD of ZnSe and ZnSxSe1-x Thin Films Using Novel Single Source Precursors

Alghamdi¹

2017

MSA

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Polycrystalline thin films of ZnSe and ZnS x Se 1−x have been deposited on glass substrates by Aerosol Assisted Chemical Vapour Deposition (AACVD) from bis(diethyldiselenocarbamato)zinc(II) and a 1:1 and 1:0.75 mixtures of bis(diethyldiselenocarbamato)zinc(II) and bis(diethyldithiocarbamato)zinc (II) as precursors. All films were characterized by p-XRD, SEM, EDX, Raman spectroscopy, photoluminescence (PL and UV/Vis spectroscopy. The band gap of pure ZnSe thin films was found to be 2.25 whereas the band gap of ZnS x Se 1−x films varied from 2.55 to 2.66 eV depending on the sulfur content in the films. PL emission spectra showed a clear blue shift for ZnS x Se 1−x films compared to ZnSe due to the sulphur content in the films which increase the band gap. The band gap of ZnSSe can be controlled by sulfur to selenium ratio in the alloy. The morphology of the ZnSe thin films changed from small randomly shaped crystallites to triangles whereas the morphology of ZnS x Se 1−x was mainly based on cuboids.

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Section: Introductionmentioning

confidence: 99%

Composition and Band Gap Controlled AACVD of ZnSe and ZnSxSe1-x Thin Films Using Novel Single Source Precursors

Alghamdi¹

2017

MSA

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“…The intensity of the NBE emission depends strongly on the growth method [91] and is much weaker than the DL emission. In some cases, the NBE emission is even absent [89,92]. In Ref.…”

Section: Optical Propertiesmentioning

confidence: 94%

“…The work reported to date has been rather limited [89][90][91][92]. It has been found that it is particularly difficult to obtain perfectly stoichiometric ZnSe nanowires and unless the growth conditions are optimized to minimize the deviations from stoichiometry, the resulting nanowires contain too high a concentration of defects to be of use in light-emitting applications.…”

Section: Optical Propertiesmentioning

confidence: 99%

Developing 1D nanostructure arrays for future nanophotonics

et al. 2006

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There is intense and growing interest in one-dimensional (1-D) nanostructures from the perspective of their synthesis and unique properties, especially with respect to their excellent optical response and an ability to form heterostructures. This review discusses alternative approaches to preparation and organization of such structures, and their potential properties. In particular, molecular-scale printing is highlighted as a method for creating organized pre-cursor structure for locating nanowires, as well as vapor-liquid-solid (VLS) templated growth using nano-channel alumina (NCA), and deposition of 1-D structures with glancing angle deposition (GLAD). As regards novel optical properties, we discuss as an example, finite size photonic crystal cavity structures formed from such nanostructure arrays possessing high Q and small mode volume, and being ideal for developing future nanolasers.

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“…ZnSe is particularly suitable for short-wavelength optoelectronic device applications including bluegreen laser diodes 16 and tunable mid-IR laser sources for remote sensing. 17 Recently one-dimensional (1D) nanostructures of ZnSe such as nanowires, nanorods, nanobelts, nanoribbons, nanoneedles, have been synthesized using various techniques including metal-organic chemical vapor deposition…”

Section: 15mentioning

confidence: 99%

Synthesis and Characterization of SiO₂-Sheathed ZnSe Nanowires

Kim¹,

Jin²,

So-Yeon³

et al. 2012

Bulletin of the Korean Chemical Society

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ZnSe/SiO2 coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of SiO2. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/ SiO2 coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the SiO2-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

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Preparation and photoluminescence of single-crystal zinc selenide nanowires

Cited by 135 publications

References 30 publications

Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Developing 1D nanostructure arrays for future nanophotonics

Synthesis and Characterization of SiO₂-Sheathed ZnSe Nanowires

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Preparation and photoluminescence of single-crystal zinc selenide nanowires

Cited by 135 publications

References 30 publications

Composition and Band Gap Controlled AACVD of ZnSe and ZnS&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;1-x&lt;/sub&gt; Thin Films Using Novel Single Source Precursors

Composition and Band Gap Controlled AACVD of ZnSe and ZnS&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;1-x&lt;/sub&gt; Thin Films Using Novel Single Source Precursors

Developing 1D nanostructure arrays for future nanophotonics

Synthesis and Characterization of SiO2-Sheathed ZnSe Nanowires

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Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Synthesis and Characterization of SiO₂-Sheathed ZnSe Nanowires