Preparation and Physical Properties of FexTaS2 (0.15 ≤ x ≥ 0.50) Compounds

Narita, Haruna; Ikuta, Hiromasa; Hinode, Hirofumi; Uchida, Takashi; Ohtani, Toshio; Wakihara, Masataka

doi:10.1006/jssc.1994.1022

Cited by 45 publications

(59 citation statements)

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“…However, the MR varies over nearly two orders of magnitude within this composition range, with a minimum MR[2K] 1% for x = 0.25 (ref. [20]) and a maximum MR[2.3K] 140% for x = 0.297 (Fig. 6).…”

Section: Resultsmentioning

confidence: 99%

“…In turn, this misalignment is the cause of large MR in Fe x TaS 2 single crystals up to 140% at compositions intermediate between the two superstructures at x = 1/4 and 1/3. We provide an explanation for the large MR in Fe x TaS 2 , which may be further applied to other highly anisotropic ferromagnets in the search for new materials with large MR. a: From reference [20]. b: From reference [19].…”

Section: Discussionmentioning

confidence: 99%

“…To search for new materials that have large MR, beyond 2D heterostructures, ferromagnetic materials that can easily have misalignments of the magnetic moments are preferred. In the ongoing research, intercalated transition metal dichalcogenides may be ideal candidates because of the potential for tuning their magnetic properties through different types or amounts of intercalants, [18][19][20] and their inherent potential for large magnetic anisotropy. Fe-intercalated TaS 2 has a ferromagnetic ground state for x = 0.23 to 0.4 in Fe x TaS 2 with the magnetic easy axis along c axis, which is perpendicular to the TaS 2 planes.…”

Section: Introductionmentioning

confidence: 99%

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Correlations of crystallographic defects and anisotropy with magnetotransport properties inFexTaS2single crystals (0.23≤x≤0.35)

et al. 2016

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Very large magnetoresistance discovered in single crystals of the ferromagnetic Fe-intercalated transition metal dichalcogenide, Fe0.28TaS2 was attributed to the deviation of the Fe concentration from commensurate values (x = 1/4 or 1/3), which caused magnetic moment misalignments. Here we report a study of FexTaS2 crystals with 0.23 ≤ x ≤ 0.35, demonstrating that crystallographic defects lead to spin disorder, which correlates with magneto-transport properties such as switching magnetic field HS, magnetoresistance MR, and even zero-field resistivity ρ0 and temperature coefficient A in ρ(T ) = ρ0 + AT 2 : The ordering temperature TC and Weiss temperature θW are maximized at the superstructure composition x = 1/4, while Hs, MR, ρ0, and A are minimum. Conversely, at a composition intermediate between the superstructure compositions x = 1/4 and 1/3, the corresponding magneto-transport properties reach local maxima.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Correlations of crystallographic defects and anisotropy with magnetotransport properties inFexTaS2single crystals (0.23≤x≤0.35)

et al. 2016

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“…The Fe atoms are intercalated in the vdW gap of the TaS 2 crystals and maintain 2H-type layer stacking [17]. The material properties of Fe x TaS 2 are well known in its bulk form, where Fe x TaS 2 shows ferromagnetic ordering accompanied by strong perpendicular magnetic anisotropy when x ranges between 0.15 and 0.45 [18,19]. The ferromagnetic ordering is strongest at x = 0.25 due to the formation of the Fe sub-lattice structure; thus, the highest ferromagnetic transition temperature T C of ~160 K can be achieved at this Fe composition.…”

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confidence: 99%

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Arai

Moriya

Yabuki

et al. 2015

Applied Physics Letters

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We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe 0.25 TaS 2 . The vdW interlayer coupling at the Fe-intercalated plane of Fe 0.25 TaS 2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction.*E-mail: moriyar@iis.u-tokyo.ac.jp; tmachida@iis.u-tokyo.ac.jp 2 Recently, studies on two-dimensional (2D) materials such as graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenides (TMDs) have received considerable attention [1,2]. These materials exhibit layered structure in the bulk form, and the van der Waals (vdW) force connects each of the layers. Thus, these crystals can easily be exfoliated down to monolayer and used to construct heterostructures of different 2D materials connected by vdW force [3]. Metal, semiconductor, and insulator 2D materials have been studied, and various functional electronics and opto-electronics devices have been demonstrated with these materials [4][5][6][7]. Further, these 2D materials could be potentially applied in the field of spintronics [8]; for example, long-distance spin transport has been demonstrated in graphene/h-BN heterostructures [9], and spin polarized tunneling has been demonstrated through graphene [10] and h-BN [11,12]. In these experiments, the source for the spin-polarized electrons is a ferromagnetic metal fabricated by the evaporation technique; thus, the interface between the ferromagnetic and non-magnetic materials involves chemical bonding. On the other hand, the vdW interface does not require any chemical bonding at the junction, in principle. Therefore, layered ferromagnetic 2D materials could possibly be used for constructing vdW heterostructures with spintronic functions. Moreover, the vdW hetrostructure could provide another degree of freedom that has not been possible in the conventional spintronics device; such as controlling the interlayer twist [13,14] In Fig. 1(c), optical micrographs of the exfoliated flake and their vdW junction are shown. The area of vdW junction is 67.8 µm 2 . The quality of the vdW interface is analyzed using cross-sectional transmission electron microscopy (TEM), as shown in Fig. 1(d). The TEM image revealed the layered structure of each Fe 0.25 TaS 2 flake with a stacking period of 0.61 nm; this period is close to the reported value for the bulk material [18]. The vdW contact between the flakes is clearly visible in the TEM image [ Fig. 1(d)].The TEM reveals that vdW junction displays different TEM contrast from the flake; this behavior is attributed to the presence of a native oxide layer existing at the surface of cleaved Fe 0.25 TaS 2 . The presence of Ta 2 O 5 oxide layer in the topmost layer of the exfoliated Fe 0.25 TaS 2 surface i...

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“…However, they allow the intercalation of magnetic atoms or molecules between the X-M-X trilayers. This leads to an interesting class of magnetic materials having quasi-2D properties [7][8][9][10] which can be varied via the amount and type of intercalated atoms. This is demonstrated in the present theoretical work on Fe-intercalated 2H-TaS 2 , where the Fe atoms occupy the octahedral holes between prismatic MX 2 trilayers (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Electronic, magnetic, and transport properties of Fe-intercalated2H−TaS2studied by means of the KKR-CPA method

Mankovsky¹,

Chadova²,

Ködderitzsch³

et al. 2015

Phys. Rev. B

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The electronic, magnetic, and transport properties of Fe-intercalated 2H-TaS 2 have been investigated by means of the Korringa-Kohn-Rostoker (KKR) method. The nonstoichiometry and disorder in the system have been accounted for using the coherent potential approximation (CPA) alloy theory. A pronounced influence of disorder on the spin magnetic moment has been found for the ferromagnetically ordered material. The same applies for the spin-orbit-induced orbital magnetic moment and magnetocrystalline anisotropy energy. The temperature dependence of the resistivity of disordered 2H-Fe 0.28 TaS 2 investigated on the basis of the Kubo-Středa formalism in combination with the alloy analogy model has been found in very satisfying agreement with experimental data. This also holds for the temperature-dependent anomalous Hall resistivity ρ xy (T ). The role of thermally induced lattice vibrations and spin fluctuations for the transport properties is discussed in detail.

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Preparation and Physical Properties of FexTaS2 (0.15 ≤ x ≥ 0.50) Compounds

Cited by 45 publications

References 0 publications

Correlations of crystallographic defects and anisotropy with magnetotransport properties inFexTaS2single crystals (0.23≤x≤0.35)

Correlations of crystallographic defects and anisotropy with magnetotransport properties inFexTaS2single crystals (0.23≤x≤0.35)

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Electronic, magnetic, and transport properties of Fe-intercalated2H−TaS2studied by means of the KKR-CPA method

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