Preparation and Piezoelectricity of &lt;i&gt;c&lt;/i&gt;-Axis Oriented LiNbO&lt;sub&gt;3&lt;/sub&gt; Thin Films on Polycrystalline Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; Substrates

Usui, Ichiro; Tamai, Fujio; Towata, Yasuhiro; Yamada, Tadashi

doi:10.2109/jcersj.105.97

Cited by 7 publications

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“…In this study, a L18 orthogonal array was utilized because this orthogonal array is the most common one in process engineering. 20 The eight control factors and each of their levels are listed in Table I. The assignment of the orthogonal array is shown in Table II.…”

Section: Methodsmentioning

confidence: 99%

“…Design of experiments and the ANOVA are statistical methods using the variances of data, and have been widely applied to the engineering and the physical and chemical sciences. [18][19][20] In the present study, we investigated the effect of eight preparation control factors of Ca 2 Al 2 SiO 7 :Ce on the ML intensity. The design of experiments and the ANOVA were utilized in order to comprehend which of the control factors has a statistically significant influence on the ML intensity.…”

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confidence: 99%

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Improvement in Mechanoluminescence Intensity of Ca[sub 2]Al[sub 2]SiO[sub 7]:Ce by the Statistical Approach

Akiyama

Nonaka

2003

J. Electrochem. Soc.

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The effect of eight preparation control factors, i.e., atmosphere, sintering temperature, sintering time, CeO 2 , Al 2 O 3 , SiO 2 , CaCO 3 , and H 3 BO 3 ratios, of Ca 2 Al 2 SiO 7 :Ce on mechanoluminescence ͑ML͒ intensity has been investigated by the design of experiments and the analysis of variance in order to increase the ML intensity. Consequently, it is proved statistically that the CaCO 3 , SiO 2 ratios, and the sintering temperature are significant control factors for the ML intensity. The CaCO 3 ratio is the most important control factor. On the other hand, the atmosphere, sintering time, CeO 2 , Al 2 O 3 , and H 3 BO 3 ratios are not statistically significant control factors, and the effect of these factors are on an error level. Moreover, a detailed investigation of the dependence of the ML intensity on the three important control factors was carried out to optimize the preparation conditions of Ca 2 Al 2 SiO 7 :Ce. The optimum conditions were that the CaCO 3 ratio was Ϫ5 mol %, the SiO 2 ratio was Ϫ5 mol %, and the sintering temperature was 1450°C. The ML intensity of Ca 2 Al 2 SiO 7 :Ce was increased twenty times by optimizing the preparation conditions.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Improvement in Mechanoluminescence Intensity of Ca[sub 2]Al[sub 2]SiO[sub 7]:Ce by the Statistical Approach

Akiyama

Nonaka

2003

J. Electrochem. Soc.

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“…It will be useful in chemical solution method to introduce statistical method for reducing the optimization process. [6][7][8][9][10][11][12] Crystallization temperature was quantitatively clarified to be most effective for the preparation of the high quality thin films in our previous work among our selected parameters. 13) The purpose of this study is to clarify the effects of the process parameters more preciously based on usage of larger orthogonal array and the other parameters that are familiar with temperature.…”

Section: Introductionmentioning

confidence: 99%

Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method

Sueshige

Ichiki

Suga

et al. 2013

Jpn. J. Appl. Phys.

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Process parameters of lead zirconate titanate thin film preparation using metal organic decomposition method were optimized by a statistical method and their effects on the film properties were investigated quantitatively in this study. The crystallization temperature and the precursor formation temperature were found to be important factors for high quality thin films. We also investigated the films deposited on the 4-in. wafer under the optimum conditions and found that it exhibited great film properties. Furthermore, the process damage to the wafer sample by photolithography was clarified experimentally. The results will be useful for the fabrication of the MEMS devices and integration technology of electrical devices including piezoelectric films.

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“…In previous studies, 11,12 the crystallinity and luminescence properties of ZnS:Mn films grown by ion plating were improved by postannealing at higher temperatures. 14,15 For example, to investigate 5 sputtering control factors with 4 levels (4 5 ), only 16 experiments (L16) would be sufficient to obtain the optimum sputtering conditions by using design of experiments L16 (4 5 ) and ANOVA. 13 Using this technique, the crystallinity of the films greatly depends on many sputtering factors such as substrate temperature, rf power, etc.…”

Section: Introductionmentioning

confidence: 99%

Upgrading the Triboluminescence of ZnS:Mn Film by Optimization of Sputtering and Thermal Annealing Conditions

Onwona-Agyeman

Suzuki

et al. 2002

J. Mater. Res.

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A statistical method of the design of experiments and analysis of variance (ANOVA) was used to obtain optimized sputtering conditions for oriented ZnS thin films doped with 5% manganese on glass substrates. The effects on the five sputtering factors-substrate temperature, radio frequency power, sputtering pressure, sputtering time, and pre-sputtering time-were simultaneously investigated by using the design of experiments and ANOVA. Through only 16 experiments, it was proved statistically at the 5% level that the substrate temperature was the only significant control factor. ZnS films were then deposited under the optimized sputtering conditions on fused quartz and thermally annealed in a reducing ambient (5% H 2 diluted in Ar) at 500, 600, 700, and 800°C. It was found that the crystallinity and triboluminescence intensity of the films were enhanced by postannealing up to 700°C.

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Preparation and Piezoelectricity of <i>c</i>-Axis Oriented LiNbO<sub>3</sub> Thin Films on Polycrystalline Si<sub>3</sub>N<sub>4</sub> Substrates

Cited by 7 publications

References 0 publications

Improvement in Mechanoluminescence Intensity of Ca[sub 2]Al[sub 2]SiO[sub 7]:Ce by the Statistical Approach

Improvement in Mechanoluminescence Intensity of Ca[sub 2]Al[sub 2]SiO[sub 7]:Ce by the Statistical Approach

Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method

Upgrading the Triboluminescence of ZnS:Mn Film by Optimization of Sputtering and Thermal Annealing Conditions

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