Preparation and properties of CdS thin films deposited by chemical bath deposition

Zhan, Hong Mei; Li, Jian Kang; Cheng, Ya

doi:10.1016/j.ijleo.2014.07.119

Cited by 12 publications

(4 citation statements)

References 15 publications

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“…Based on the direct allowed inter band transition theory, the optical band gap of CdS is determined by extrapolating the linear part of the curve to the zero absorption coefficient ( = 0) as shown in Fig.2. The film exhibits an energy gap of 2.4217122 (eV) under this condition not far from the theoretical value of 2.42 (eV)[10] and similar to the band gap of bulk CdS in comparison with those reported by others (2.3152 (eV) and 2.4286 (eV) respectively)[27][28][29][30][31].…”

supporting

confidence: 86%

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Arba¹,

Hartiti²,

Ridah³

et al. 2015

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC)

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Thin films of Cadmium sulfide (CdS) is one of the promising semiconductor materials which can be used as a tampon materials deposited by chemical bath deposition (CBD) in thin film solar cells thanks to its tunable direct band gap energy, large transmission coefficient and cost effective.The role of the CdS layer is still debated within the scientific community, but the material efficiency obtained with this fine n-type semiconductor layer is very high. It could protect the damage associated with the following spray deposits of defects in the surface of the absorber or adapt the width of the energy band gap between the absorber (~1.2 (eV)) and the window layer (~3.3 (eV)). The aim of this present study is to investigate the influence of deposition parameters of CdS thin films using the L9 orthogonal array of the Taguchi's design of experiments (DOE) elaborated by CBD method on ordinary glass substrate. The Taguchi design was used to evaluate the effects of four deposition parameters called factors namely the ratios [Cd]/[S], time of deposition, Ammonia concentration [NH4Cl] and volume ratio V(H2O)/V(NH3) on optical properties of elaborated films.The identification of the most influent factor of the deposition process on the band gap energy of elaborated films is also done by employing the analysis of variance (ANOVA). The Taguchi analysis employed in the present investigation led to optimize process parameters for the most optimal deposition conditions. Under the optimized configuration, the CdS films showed optimal gap energy of 2.42 (eV) [1]. The Taguchi analysis employed in the present investigation led to optimize process parameters for the most optimal deposition conditions.

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supporting

confidence: 86%

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Arba¹,

Hartiti²,

Ridah³

et al. 2015

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC)

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“…The CdS films deposited at low temperatures (˂ 100 o C), normally show a cubic structure, and films deposited at high temperatures (˃ 300 o C), show hexagonal structures [8]. Also, the CdS film structure transforms from cubic structure to mixed cubic and hexagonal structure by increasing the pH values of the bath solution [14]. When the concentration of film changing, raising the bath temperature, increasing the reaction time or the annealing temperature can be improve the diffraction peaks become higher and narrower.…”

Section: Crystal Structural Properties Of the Cds Filmsmentioning

confidence: 99%

Kimyasal Banyo Depolama Yöntemi ile Elde Edilen CdS Filmlerinin Tavlama Sıcaklığının Kristal, Optiksel ve Yapısal Özellikleri Üzerine Etkisi

Aybek

Rüzgar

2017

SAÜ Fen Bilimleri Enstitüsü Dergisi

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Kadmiyum sülfür filmleri kimyasal banyo depolama yöntemi ile cam tabanlar üzerine biriktirildi. Elde edilen filmler azot gazında 1 saat boyunca 200-400 o C sıcaklık aralığında tavlandı. Filmlerin kristal yapısı x-ışını kırınım (XRD) desenlerinden belirlendi. XRD verileri, tavlama etkisiyle CdS (FCC) yapısından α-CdS (Hawleyite) formuna geçiş olduğunu gösterdi. Elde edilen CdS filmlerinin optiksel bant aralığı değerleri optiksel absorbans spetrumlarından yararlanılarak 2,33 ve 2,39 eV olarak belirlendi. Bant sarkmaları değerleri 120-350 meV arasında olduğu hesaplandı. Filmlerin görünür bölgede %45-92 arasında geçirgenlik değerlerine sahip olduğu belirlendi.

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“…In our experiments of laser assisted chemical deposition, laser energy can be absorbed by the negatively charged sulfide to release elemental sulfur and free electrons to form metal sulfide thin films, in analogous to photochemical deposition [24,25]. (6) Since pulsed laser energy is much higher than any typical bond dissociation enthalpy, the laser pulses can induce thiourea dissociation to release elemental sulfur and free electrons in addition to the bath temperature effect. Hence the rate of Cd 2+ reduction to form cadmium sulfide will be increased, resulting in an accelerated CdS film growth.…”

Section: Photoconductivitymentioning

confidence: 99%

“…CdS is proved to be the most suitable window/buffer layer in thin film solar cells based on both CdTe and Cu(In,Ga)Se2 [5][6][7] due its direct band gap of 2.4 eV, high absorption coefficient and low resistivity. For such applications simple solution based methods have been developed to deposit CdS thin films of adequate thickness to allow high transmission [8,9] of visible solar radiations.…”

Section: Introductionmentioning

confidence: 99%

Structure and properties of CdS thin films prepared by pulsed laser assisted chemical bath deposition

García

Loredo

Shaji

et al. 2016

Materials Research Bulletin

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Preparation and properties of CdS thin films deposited by chemical bath deposition

Cited by 12 publications

References 15 publications

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Determination of the optimal conditions for the deposition of Cadmium sulfide thin films by chemical bath deposition using Taguchi method

Kimyasal Banyo Depolama Yöntemi ile Elde Edilen CdS Filmlerinin Tavlama Sıcaklığının Kristal, Optiksel ve Yapısal Özellikleri Üzerine Etkisi

Structure and properties of CdS thin films prepared by pulsed laser assisted chemical bath deposition

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