Preparation and properties of CuInS2 thin films produced by exposing sputtered Cu-In films to an H2S atmosphere

Abstract

CuInS2 thin films have been made from copper, indium, and hydrogen sulfide gas using a two-step technique which involves exposing Cu-In films produced by sputtering pure copper and pure indium to H2S gas diluted with argon. X-ray diffraction, Auger electron spectroscopy, optical transmission, and electrical measurements were used to identify and characterize the CuInS2. The resulting films were all p type with resistivity in the range 0.1–500 Ω cm and showed a preferred orientation of the (112) plane parallel to the substrate.

Cu(InGa)Se 2 Solar Cells

“…This general approach was first demonstrated by Grindle et al [86] who sputtered Cu/In layers and reacted them in hydrogen sulfide to form CuInS 2 . This was first adapted to CuInSe 2 by Chu et al [87].…”

Crystal Structure and Optical Properties of CuInS2 Nanocrystals in a Glass Matrix

“…Crystalline CuInS 2 has the chalcopyrite lattice with the parameters a = 5.52279 A Ê and c = 11.13295 A Ê [18,28]. It possesses a high optical absorption coefficient in the visible and near-IR regions (a b 10 4 cm ± ±1 [19]) and relates to direct-band semiconductors [11,20].…”

Enhanced photoelectrocatalytic degradation of 2,4-dichlorophenoxyacetic acid by CuInS2 nanoparticles deposition onto TiO2 nanotube arrays

“…Further, the combination of CuInS 2 and TiO 2 NT arrays will make the composites more practical and cost-effective because of its simple preparation and separation compared to the powdery TiO 2 photocatalyst. CuInS 2 can be prepared by many techniques [19][20][21][22][23][24]. Among them, electrodeposition technique is more attractive due to its simplicity and low cost.…”