Preparation and properties of FeAs2 and FeSb2

Fan, A. K.; Rosenthal, G.; McKinzie, H.; Wold, A.

doi:10.1016/0022-4596(72)90021-7

Cited by 91 publications

(50 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…* The present model differs from the one proposed by Goodenough (1972) mainly in the relative position of bonding and nonbonding tza levels above and below the Fermi level. Thus conductive and magnetic properties are similar for both models and our model agrees well with the experimental findings for FeAs2, FeSb2 (Fan, Rosenthal, McKinzie & Wold, 1972), and FeAsz_xSex (Baghdadi & Wold, 1974).…”

Section: Marcasites and Arsenopyritessupporting

confidence: 90%

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

Jeitschko¹,

Donohue²

1975

Acta Crystallogr Sect B

View full text Add to dashboard Cite

The new compound MnP4 was prepared by reaction of the elemental components at pressures of 30-55 kbar in a tetrahedral anvil high-pressure device. It is a diamagnetic semiconductor with an activation energy of 0-14 eV and crystallizes with space group C2/c, a= 10.513 (1), b= 5.0944 (4), c= 21-804 (2) A, fl=94-71 (1) °, and Z= 16. The structure was determined from single-crystal counter data by Patterson and Fourier methods and refined to a conventional R of 0.051 for 1765 reflections. The Mn atoms are in octahedral P coordination, and the P atoms are tetrahedrally coordinated by Mn and P atoms. The Mn atoms have formal oxidation number 2 + (d 5 configuration). Four MnP6 octahedra share edges to form a linear array of four Mn atoms. The Mn atoms are displaced from the centers of the octahedra toward one another to form pairs with a resulting Mn-Mn bonding distance of 2.941 A, thus accounting for the diamagnetism. Average Mn-P and P-P distances are 2.282 and 2-225 ,£,, respectively. MnP4 can be described as an eight-layer stacking variant of the two-layer CrP4 structure, although bonding within and between the layers is of equal strength. Qualitative MO bonding models for the MnP4 and CrP4 structures are presented that allow rationalization of magnetic and conductive properties. A similar bonding proposal is made for the marcasite and arsenopyrite structures which, as is the case for CrP4 and MnP4, have TPo octahedra linked via edges, with transition metal atoms forming infinite strings and pairs, respectively.

show abstract

Section: Marcasites and Arsenopyritessupporting

confidence: 90%

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

Jeitschko¹,

Donohue²

1975

Acta Crystallogr Sect B

View full text Add to dashboard Cite

show abstract

“…At temperatures lower than 236 C, there are three intermetallic Fe-As compounds in their binary phase diagram: FeAs 2 , FeAs, and Fe 2 As. 132 However, none of them is ferromagnetic; FeAs 2 is diamagnetic, 133 while FeAs and Fe 2 As are both anti-ferromagnetic with Neel temperature of 77 K and $353 K, respectively. 132 We observed in-plane anisotropy in the magnetoresistance of a 10-nm thick n-type (In 0.94 ,Fe 0.06 )As layer, and revealed a two-fold anisotropy along the [-110] direction and an 8-fold symmetric anisotropy along the crystal axes of (In,Fe)As, thus further supporting the intrinsic ferromagnetism of this material.…”

Section: à3mentioning

confidence: 99%

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Tanaka

Ohya

Hai

2014

Applied Physics Reviews

View full text Add to dashboard Cite

Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMS), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose, and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As, and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (InFe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

show abstract

“…58). While most members of this structure show semiconducting behavior, FeSb 2 appears to have the smallest energy gap and the most unusual magnetic properties [16,17], which have been later explained by da Silver who assumed highly correlated valence and conduction bands in FeSb 2 [18]. Note that the recent interpretation of the magnetic susceptibility by the CBI model [10] is similar to da Silver's approach.…”

Section: Introductionmentioning

confidence: 72%

“…It should be also noted that, while for FeSi, χ(T ) follows a Curie-Weiss law at temperatures above the broad maximum at around 500 K [1], for FeSb 2 , such behavior could not be confirmed so far. This is partly due to the fact that the so far available magnetic susceptibility data of the latter compound are limited to below 550 K: FeSb 2 is supposed to decompose into FeSb and Sb above 573 K [17]. This decomposition temperature, however, remains controversial [36].…”

Section: Shown Inmentioning

confidence: 99%

“…In contrast χ(T ) of RuSb 2 is almost T independent and diamagnetic due to the predominant inner-core contribution. No cooperative magnetism has been observed in FeSb 2 in various measurements including magnetic-susceptibility [6,17,18], neutron-diffraction [30], and 57 Fe-Mössbauer [31] measurements. A nonmagnetic ground state of FeSb 2 has been commonly assumed within a simple ionic picture proposed by Goodenough [32], where the iron has a low-spin 3d 4 configuration because it is located within a slightly distorted octahedron, and therefore the t 2g state splits into two degenerate d yz and d xz orbitals (ground state, fully filled) and one higher lying d xy orbital.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Strong electron correlations in FeSb₂

et al. 2011

View full text Add to dashboard Cite

FeSb2 has been recently identified as a new model system for studying many‐body renormalizations in a d‐electron based narrow gap semiconducting system, strongly resembling FeSi. The electron‐electron correlations in FeSb2 manifest themselves in a wide variety of physical properties including electrical and thermal transport, optical conductivity, magnetic susceptibility, specific heat and so on. We review some of the properties that form a set of experimental evidences revealing a significant role of correlation effects in FeSb2. The metallic state derived from slight Te doping in FeSb2, which exhibits a large quasiparticle mass, will also be introduced.

show abstract

Preparation and properties of FeAs2 and FeSb2

Cited by 91 publications

References 17 publications

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Strong electron correlations in FeSb₂

Contact Info

Product

Resources

About

Preparation and properties of FeAs2 and FeSb2

Cited by 91 publications

References 17 publications

High-pressure MnP4, a polyphosphide with Mn–Mn pairs

High-pressure MnP4, a polyphosphide with Mn–Mn pairs

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Strong electron correlations in FeSb2

Contact Info

Product

Resources

About

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

High-pressure MnP₄, a polyphosphide with Mn–Mn pairs

Strong electron correlations in FeSb₂