Preparation and Properties of GaN-Based MOSHFETs

Abstract

Results obtained on AlGaN/GaN and InAlN/GaN MOSHFETs using Al2O3 as a gate insulator are reviewed. It is shown that the static as well as high-frequency performances can be improved in comparison to the HFET counterparts. Density of trap states in the MOSHFETs with Al2O3 prepared by MOCVD, Al oxidation and ALD techniques are compared. These results underline high prospect of GaN-based MOSHFETs with Al2O3 gate insulator for reliable microwave power devices.